Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy

2007 ◽  
Vol 253 (7) ◽  
pp. 3503-3507 ◽  
Author(s):  
J.H. Kim ◽  
Y.J. Park ◽  
Y.M. Park ◽  
J.D. Song ◽  
J.I. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Interband Transition ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Carrier Confinement

Photoluminescence Characteristics of Self-Aligned InGaAs Quantum Dots Fabricated by Using Atomic Layer Epitaxy

2008 ◽  
Vol 53 (4) ◽  
pp. 2100-2104 ◽  
Author(s):  
J. O. Kim ◽  
S. J. Lee ◽  
S. K. Noh ◽  
J. W. Choe ◽  
T. W. Kang
Keyword(s):  
Quantum Dots ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique

2004 ◽  
Vol 95 (1) ◽  
pp. 123-127 ◽  
Author(s):  
Young Min Park ◽  
Young Ju Park ◽  
Kwang Moo Kim ◽  
Jae Cheol Shin ◽  
Jin Dong Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Self Assembled

Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

2002 ◽  
Vol 91 (8) ◽  
pp. 5498-5500 ◽  
Author(s):  
C. Adelmann ◽  
J. Brault ◽  
J.-L. Rouvière ◽  
H. Mariette ◽  
Guido Mula ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy
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