2003 International Symposium on Compound Semiconductors ISCS-03
Latest Publications

TOTAL DOCUMENTS

121

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780378202

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A picosecond passively mode-locked vertical extended cavity surface emitting diode laser

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239993 ◽

2005 ◽

Author(s):

Qiang Zhang ◽

K. Jasim ◽

A.V. Nurmikko ◽

A. Mooradian ◽

G. Carey ◽

...

Keyword(s):

Diode Laser ◽

Cavity Surface ◽

Extended Cavity

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Determination of GaAs/GaAsSb heterojunction conduction band offset

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239983 ◽

2005 ◽

Author(s):

J.-B. Wang ◽

S.R. Johnson ◽

C.Z. Guo ◽

S.A. Chaparro ◽

J.A. Gupta ◽

...

Keyword(s):

Conduction Band ◽

Band Offset ◽

Conduction Band Offset

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Bulk growth of compositionauy homogeneous III-V ternary anoys

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239984 ◽

2005 ◽

Author(s):

P.S. Dutta ◽

A. Kumar ◽

A. Chandola ◽

R. Pino ◽

H.J. Kim ◽

...

Keyword(s):

Bulk Growth

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Bipolar cascade lasers at emitting wavelengths near 2 μm

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239991 ◽

2005 ◽

Author(s):

R.Q. Yang ◽

Yueming Qiu

Keyword(s):

Bipolar Cascade Lasers ◽

Cascade Lasers ◽

Bipolar Cascade

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Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239987 ◽

2005 ◽

Author(s):

M. Takebe ◽

N.C. Paul ◽

K. Nakamura ◽

M. Tametou ◽

K. Iiyama ◽

...

Keyword(s):

Ex Situ ◽

Insulating Layer ◽

Nitridation Process ◽

Improved Performance

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Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239989 ◽

2005 ◽

Author(s):

J. Hontschel ◽

W. Klix ◽

R. Stenzel

Keyword(s):

Integrated Circuits ◽

Transport Model ◽

Quantum Effects ◽

Monolithic Integrated Circuits ◽

Quantum Hydrodynamic ◽

Hydrodynamic Transport

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DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In/sub 0.51/Ga/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs power pHEMTs

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239986 ◽

2005 ◽

Author(s):

Yo-Sheng Lin ◽

Hsin-Yuan Tu ◽

Dou-Shuan-Chou ◽

Shey-Shi Lu

Keyword(s):

Scattering Parameters ◽

Power Characteristics ◽

Enhancement Mode

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Analysis of high-temperature continuous wave operation of type-II interband cascade lasers

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239992 ◽

2005 ◽

Author(s):

M.V. Kisin ◽

S.D. Suchalkin ◽

J. Bruno ◽

G. Belenky ◽

S. Luryi

Keyword(s):

High Temperature ◽

Continuous Wave ◽

Type Ii ◽

Continuous Wave Operation ◽

Interband Cascade Lasers ◽

Cascade Lasers

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Design and realization of resonant tunneling permeable base transistors

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239988 ◽

2005 ◽

Author(s):

P. Lindstrom ◽

E. Lind ◽

L.-E. Wemersson

Keyword(s):

Resonant Tunneling

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Reliability of BCB passivated InAlAs/InGaAs HEMTs under thermal stress

2003 International Symposium on Compound Semiconductors ISCS-03 ◽

10.1109/iscs.2003.1239990 ◽

2005 ◽

Cited By ~ 2

Author(s):

D.H. Kim ◽

M.H. Yoon ◽

T.H. Kim ◽

K. Yang

Keyword(s):

Thermal Stress

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2003 International Symposium on Compound Semiconductors ISCS-03Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A picosecond passively mode-locked vertical extended cavity surface emitting diode laser

Determination of GaAs/GaAsSb heterojunction conduction band offset

Bulk growth of compositionauy homogeneous III-V ternary anoys

Bipolar cascade lasers at emitting wavelengths near 2 μm

Improved performance of mn-thin gate insulating layer formed by ex-situ dry oxi-nitridation process upon GaAs : GaAs-MISFET

Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs by simulations with a quantum hydrodynamic transport model

DC, and RF scattering parameters, noise and power characteristics of enhancement-mode In/sub 0.51/Ga/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs power pHEMTs

Analysis of high-temperature continuous wave operation of type-II interband cascade lasers

Design and realization of resonant tunneling permeable base transistors

Reliability of BCB passivated InAlAs/InGaAs HEMTs under thermal stress

2003 International Symposium on Compound Semiconductors ISCS-03
Latest Publications