Nanostructured thin films obtained by ultra-short pulse laser deposition of vanadium carbide

2009 ◽  
Vol 255 (10) ◽  
pp. 5220-5223 ◽  
Author(s):  
R. Teghil ◽  
A. De Bonis ◽  
A. Galasso ◽  
P. Villani ◽  
A. Santagata ◽  
...  
2009 ◽  
Vol 255 (17) ◽  
pp. 7729-7733 ◽  
Author(s):  
R. Teghil ◽  
A. Santagata ◽  
A. De Bonis ◽  
A. Galasso ◽  
P. Villani

1999 ◽  
Vol 69 (7) ◽  
pp. S347-S353 ◽  
Author(s):  
P.S. Banks ◽  
L. Dinh ◽  
B.C. Stuart ◽  
M.D. Feit ◽  
A.M. Komashko ◽  
...  

2009 ◽  
Vol 517 (6) ◽  
pp. 1880-1886 ◽  
Author(s):  
R. Teghil ◽  
L. D'Alessio ◽  
A. De Bonis ◽  
D. Ferro ◽  
A. Galasso ◽  
...  

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  

2005 ◽  
Author(s):  
Andreas Hertwig ◽  
Sven Martin ◽  
Wolfgang Kautek ◽  
Jörg Krüger

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