Laser energy density, structure and properties of pulsed-laser deposited zinc oxide films

2011 ◽  
Vol 257 (14) ◽  
pp. 6314-6319 ◽  
Author(s):  
M.G. Tsoutsouva ◽  
C.N. Panagopoulos ◽  
M. Kompitsas
Keyword(s):  
Zinc Oxide ◽  
Energy Density ◽  
Laser Energy ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Energy Density ◽  
Density Structure ◽  
Structure And Properties ◽  
Zinc Oxide Films

scholarly journals Ultra Thin Al-doped Transparent Conducting Zinc Oxide Films Fabricated by Pulsed Laser Deposition Method

2008 ◽  
Vol 51 (5) ◽  
pp. 323-325 ◽  
Author(s):  
Masataka NAKAMURA ◽  
Kimihiro IKUTA ◽  
Takanori AOKI ◽  
Akio SUZUKI ◽  
Tatsuhiko MATSUSHITA ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Zinc Oxide Films ◽  
Transparent Conducting

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al2O3 by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
A. Suárez-García ◽  
J-P. Barnes ◽  
R. Serna ◽  
A. K. Petford-Long ◽  
C. N. Afonso ◽  
...  
Keyword(s):  
Energy Density ◽  
Cross Section ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Laser Energy Density ◽  
X Ray ◽  
Continuous Layer ◽  
Transmission Electron ◽  
Order Of Magnitude

AbstractThe effect of the laser energy density used to deposit Bi onto amorphous aluminum oxide (a-Al2O3) on the growth of Bi nanocrystals has been investigated using transmission electron microscopy of cross section samples. The laser energy density on the Bi target was varied by one order of magnitude (0.4 to 5 J cm-2). Across the range of energy densities, in addition to the Bi nanocrystals nucleated on the a-Al2O3 surface, a dark and apparently continuous layer appears below the nanocrystals. Energy dispersive X-ray analysis on the layer have shown it is Bi rich. The separation from the Bi layer to the bottom of the nanocrystals on top is consistent with the implantation range of Bi species in a-Al2O3. As the laser energy density increases, the implantation range has been measured to increase. The early stages of the Bi growth have been analyzed in order to determine how the Bi implanted layer develops.

Morphology and photoluminescence properties of zinc oxide films grown by pulsed laser deposition

2009 ◽  
Vol 255 (24) ◽  
pp. 9680-9683 ◽  
Author(s):  
D. Valerini ◽  
A.P. Caricato ◽  
A. Cretí ◽  
M. Lomascolo ◽  
F. Romano ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Photoluminescence Properties ◽  
Zinc Oxide Films

Formation of Q-carbon by adjusting sp3 content in diamond-like carbon films and laser energy density of pulsed laser annealing

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 504-511 ◽  
Author(s):  
Hiroki Yoshinaka ◽  
Seiko Inubushi ◽  
Takanori Wakita ◽  
Takayoshi Yokoya ◽  
Yuji Muraoka
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Energy Density ◽  
Diamond Like Carbon ◽  
Pulsed Laser Annealing

Ultrathin Al-doped transparent conducting zinc oxide films fabricated by pulsed laser deposition

2008 ◽  
Vol 517 (4) ◽  
pp. 1478-1481 ◽  
Author(s):  
Akio Suzuki ◽  
Masataka Nakamura ◽  
Ryota Michihata ◽  
Takanaori Aoki ◽  
Tatsuhiko Matsushita ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zinc Oxide Films ◽  
Transparent Conducting

Er-Doping in Silicon by Pulsed Laser Irradiation

1993 ◽  
Vol 301 ◽  
Author(s):  
Kenshiro Nakashima
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Energy Density ◽  
Er Doping ◽  
Erbium Ions ◽  
State Regime ◽  
Er Doped ◽  
Pulsed Laser Irradiation

ABSTRACTErbium ions were successfully doped in silicon by pulsed laser irradiation above the threshold laser energy density. Photoluminescence peaks at 1.54, 1.59 and 1.64 µm from Er-optical centers were observed after annealing of Er-doped samples. The intensity of the 1.54 µm Er-emission band increased upon increase in the laser energy density, and then gradually decreased after reaching the maximum, due to the laser sputtering of the silicon substrate. Oxygen atoms, which were unintentionally codoped with Er-ions, were found to be distributed in the same region as in Er-ions, and were suggested to play roles to activate Er-optical centers. The maximum concentration of Er-ions doped in the solid state regime were estimated to be the order of 1018 cm−3 by the Rutherford backscattering measurements.

scholarly journals Ultra Thin Ga-doped Transparent Conducting Zinc Oxide Films Fabricated by Pulsed Laser Deposition Method

2010 ◽  
Vol 53 (3) ◽  
pp. 200-202 ◽  
Author(s):  
Shinji KANEDA ◽  
Takanori AOKI ◽  
Tatsuhiko MATSUSHITA ◽  
Akio SUZUKI ◽  
Masahiro OKUDA
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Zinc Oxide Films ◽  
Transparent Conducting

Laser Energy Dependent Structure of Pulsed Laser Deposited Barium Dititanate Films

2009 ◽  
Vol 66 ◽  
pp. 183-186
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Energy Density ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Preferred Orientation ◽  
Laser Deposition ◽  
Laser Energy Density ◽  
Energy Dependent ◽  
Deposited Films

Barium dititanate (BaTi2O5) films were prepared on MgO (100) substrate by pulsed laser deposition under various laser energy densities. The effect of laser energy on crystallinity, orientation and surface morphology was investigated. The preferred orientation of the as-deposited films changes from (710) to (020) with decreasing laser energy, and the surface morphology is different depending on laser energy too. The b-axis oriented BaTi2O5 film could be obtained at the laser energy density of 2J/cm2, where the film shows a dense surface with an elongated granular texture.

Structure and properties of zinc oxide films deposited in the recombination burning zone of a low-temperature plasma

2007 ◽  
Vol 52 (5) ◽  
pp. 663-665 ◽  
Author(s):  
E. I. Burylin ◽  
A. G. Veselov ◽  
A. S. Dzhumaliev ◽  
V. I. Elmanov ◽  
S. N. Istomin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Oxide Films ◽  
Structure And Properties ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Zinc Oxide Films ◽  
Burning Zone
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