Facile morphological control of single-crystalline silicon nanowires

2012 ◽  
Vol 258 (24) ◽  
pp. 9792-9799 ◽  
Author(s):  
Shao-long Wu ◽  
Ting Zhang ◽  
Rui-ting Zheng ◽  
Guo-an Cheng
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Morphological Control ◽  
Single Crystalline

Self-diffusion in single crystalline silicon nanowires

2018 ◽  
Vol 123 (16) ◽  
pp. 161515 ◽  
Author(s):  
T. Südkamp ◽  
G. Hamdana ◽  
M. Descoins ◽  
D. Mangelinck ◽  
H. S. Wasisto ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Self Diffusion

Fabrication of Single-Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

2006 ◽  
Vol 16 (3) ◽  
pp. 387-394 ◽  
Author(s):  
K. Q. Peng ◽  
J. J. Hu ◽  
Y. J. Yan ◽  
Y. Wu ◽  
H. Fang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Metal Particles ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Catalytic Metal

scholarly journals Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Stefan Weidemann ◽  
Maximilian Kockert ◽  
Dirk Wallacher ◽  
Manfred Ramsteiner ◽  
Anna Mogilatenko ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Pore Formation ◽  
Gas Adsorption ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Phonon Confinement ◽  
Single Crystalline ◽  
Boron Doped ◽  
Doped Silicon

Silicon nanowires are prepared by the method of the two-step metal-assisted wet chemical etching. We analyzed the structure of solid, rough, and porous nanowire surfaces of boron-doped silicon substrates with resistivities ofρ> 1000 Ωcm,ρ= 14–23 Ωcm, andρ< 0.01 Ωcm by scanning electron microscopy and nitrogen gas adsorption. Silicon nanowires prepared from highly doped silicon reveal mesopores on their surface. However, we found a limit for pore formation. Pores were only formed by etching below a critical H2O2concentration (cH2O2<0.3 M). Furthermore, we determined the pore size distribution dependent on the etching parameters and characterized the morphology of the pores on the nanowire surface. The pores are in the regime of small mesopores with a mean diameter of 9–13 nm. Crystal and surface structure of individual mesoporous nanowires were investigated by transmission electron microscopy. The vibrational properties of nanowire ensembles were investigated by Raman spectroscopy. Heavily boron-doped silicon nanowires are highly porous and the remaining single crystalline silicon nanoscale mesh leads to a redshift and a strong asymmetric line broadening for Raman scattering by optical phonons at 520 cm−1. This redshift,λSi  bulk=520 cm−1  →λSi  nanowire=512 cm−1, hints to a phonon confinement in mesoporous single crystalline silicon nanowires.

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