Stoichiometry dependence of the optical and minority-carrier lifetime behaviors of CdTe epitaxial films: A low-temperature and time-resolved photoluminescence study

2016 ◽  
Vol 387 ◽  
pp. 477-482 ◽  
Author(s):  
Kai Tang ◽  
Xuanting Zhu ◽  
Liangqing Zhu ◽  
Wei Bai ◽  
Jiawei Bai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Films ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

scholarly journals Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence

2015 ◽  
Vol 77 ◽  
pp. 139-148 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Anne Kaminski-Cachopo ◽  
Guillaume Chareyre ◽  
Mustapha Lemiti ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Evaluation of Long Carrier Lifetimes in Very Thick 4H-SiC Epilayers

2011 ◽  
Vol 679-680 ◽  
pp. 197-200 ◽  
Author(s):  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
Hidekazu Tsuchida
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Constant ◽  
Minority Carrier Lifetime ◽  
Bulk Carrier ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
High Injection ◽  
Time Resolved Photoluminescence ◽  
Annealing Method

We investigate the carrier lifetimes in very thick 4H-SiC epilayers (~250 μm) by means of time-resolved photoluminescence and microwave photoconductive decay. Both the minority carrier lifetime and the high injection lifetime are found to reach 18.5 μs by applying the carbon implantation/annealing method to the as-grown epilayers. We also study the epilayer thickness dependence of the carrier lifetime by successive experiments involving lifetime measurement and polishing. Based on the relationships between epilayer thickness and carrier lifetime, the bulk carrier lifetime and the hole diffusion constant are discussed.

scholarly journals Minority Carrier Lifetime Measurements on 4H-SiC Epiwafers by Time-Resolved Photoluminescence and Microwave Detected Photoconductivity

2019 ◽  
Vol 963 ◽  
pp. 313-317
Author(s):  
Jan Beyer ◽  
Nadine Schüler ◽  
Jürgen Erlekampf ◽  
Birgit Kallinger ◽  
Patrick Berwian ◽  
...  
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Time Resolved ◽  
Excess Carrier ◽  
Time Resolved Photoluminescence ◽  
Different Thickness

Temperature dependent microwave detected photoconductivity MDP and time-resolved photoluminescence TRPL were employed to investigate the carrier lifetime in CVD grown 4H-SiC epilayers of different thickness. The minority carrier lifetime may be found from both theMDP and defect PL decay at room temperature for all epilayers, whereas the near bandedge emission (NBE) decay is much faster for thin epilayers (<17 μm) due to the substrate proximity and only follows the minority carrier lifetime for thicker samples at lower excess carrier concentrations.

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