Minority‐carrier lifetime in indium‐dopedn‐type Hg0.78Cd0.22Te liquid‐phase‐epitaxial films

1992 ◽  
Vol 72 (10) ◽  
pp. 4761-4766 ◽  
Author(s):  
M. C. Chen ◽  
L. Colombo
2005 ◽  
Vol 98 (7) ◽  
pp. 073708 ◽  
Author(s):  
Yusuke Satoh ◽  
Noritaka Usami ◽  
Wugen Pan ◽  
Kozo Fujiwara ◽  
Kazuo Nakajima ◽  
...  

1986 ◽  
Vol 90 ◽  
Author(s):  
J. S. Chen ◽  
J. Bajaj ◽  
W. E. Tennant ◽  
D. S. Lo ◽  
M. Brown ◽  
...  

ABSTRACTMinority carrier lifetime measurements at 77K were carried out in ptype liquid phase epitaxial (LPE) Hg 1-xCdx Te/CdTe (x = 0.22) using the photoconductive decay technique. Lifetimes of 20 to 7000 ns were obtained in samples with hole concentrations, p, in the range 1014 to 1016 cm-3. The hole concentrations were determineg by analyzing the Hall data using a double-layer model. It was found that the minority carrier lifetime is inversely proportional to p01.86. This result demonstrates that the Auger mechanism may be the dominant recombination process in p-type LPE Hg0.78 Cd0.22Te/CdTe. The temperature dependence of minority carrier lifetime was also measured between 10 and 200K for several samples.


1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  

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