ABSTRACTCu2ZnSnS4 (henceforth CZTS) absorber layers are successfully synthesized by a sulfurization technique of physical vapor deposited precursors. In our previous report, we have clarified that the off-stoichiometry composition of Cu-poor and Zn-rich is desirable to achieve high conversion efficiency. By using CZTS compound target that provide such active composition, we could conduct a simple single sputtering method to prepare CZTS absorber. In our laboratory, a two-stage process of precursor preparation followed by sulfurization is a major fabrication method from the start of this study. We think that this method is suitable for a mass production. An optimization of the sulfurization process is a quite important issue because the active composition was already revealed. In this paper, TG/DTA system available in the H2S atmosphere is introduced to optimize the sulfurization condition. As a result, bump-free CZTS films were prepared successfully and the fluctuation of J-V properties in one substrate was drastically suppressed.
