Novel 2D boron nitride with optimal direct band gap: A theoretical prediction

2021 ◽  
pp. 151929
Author(s):  
Feng-Yin Li ◽  
Dong-Chun Yang ◽  
Liang Qiao ◽  
Roberts I. Eglitis ◽  
Ran Jia ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Theoretical Prediction ◽  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

New One-Dimensional Material Nb2 Se9 : Theoretical Prediction of Indirect to Direct Band Gap Transition due to Dimensional Reduction

2018 ◽  
Vol 13 (2) ◽  
pp. 1800517 ◽  
Author(s):  
Weon-Gyu Lee ◽  
Sudong Chae ◽  
You Kyoung Chung ◽  
Seungbae Oh ◽  
Jae-Young Choi ◽  
...  
Keyword(s):  
Theoretical Prediction ◽  
Band Gap ◽  
Dimensional Reduction ◽  
One Dimensional ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Direct band-gap crossover in epitaxial monolayer boron nitride

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
C. Elias ◽  
P. Valvin ◽  
T. Pelini ◽  
A. Summerfield ◽  
C. J. Mellor ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

2015 ◽  
Vol 54 (10) ◽  
pp. 3112-3115 ◽  
Author(s):  
Shengli Zhang ◽  
Zhong Yan ◽  
Yafei Li ◽  
Zhongfang Chen ◽  
Haibo Zeng
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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