High-resolution and high-contrast ultrafast ultrasound imaging using coherent plane wave adaptive compounding

2022 ◽  
Vol 73 ◽  
pp. 103446
Author(s):  
Maryam Hashemseresht ◽  
Sajjad Afrakhteh ◽  
Hamid Behnam
2012 ◽  
Vol 132 (10) ◽  
pp. 1552-1557 ◽  
Author(s):  
Hirofumi Taki ◽  
Takuya Sakamoto ◽  
Makoto Yamakawa ◽  
Tsuyoshi Shiina ◽  
Toru Sato

Author(s):  
Po Fu Chou ◽  
Li Ming Lu

Abstract Dopant profile inspection is one of the focused ion beam (FIB) physical analysis applications. This paper presents a technique for characterizing P-V dopant regions in silicon by using a FIB methodology. This technique builds on published work for backside FIB navigation, in which n-well contrast is observed. The paper demonstrates that the technique can distinguish both n- and p-type dopant regions. The capability for imaging real sample dopant regions on current fabricated devices is also demonstrated. SEM DC and FIB DC are complementary methodologies for the inspection of dopants. The advantage of the SEM DC method is high resolution and the advantage of FIB DC methodology is high contrast, especially evident in a deep N-well region.


2021 ◽  
Author(s):  
Hannah Strohm ◽  
Sven Rothlubbers ◽  
Jurgen Jenne ◽  
Matthias Gunther

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