Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice

2010 ◽  
Vol 10 (3) ◽  
pp. S435-S438 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shigeru Yamada ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
2015 ◽  
Vol 117 (2) ◽  
pp. 024304
Author(s):  
Xixing Wen ◽  
Xiangbin Zeng ◽  
Wenjun Zheng ◽  
Wugang Liao ◽  
Feng Feng

2008 ◽  
Vol 1101 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai

AbstractWe prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers for thin-film solar cell applications. Transmission electron microscope (TEM) observation revealed that the size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence (PL) of the Si-QDSLs. From the results of the PL measurement, the bandgap of the Si-QDSLs can be controlled from 1.1 eV to 1.6 eV by varying the diameter of silicon quantum dots. ESR measurement indicated that HPT reduced the defect density in a Si-QDSL from 1.83 ×1019 to 1.67 sup1018 cm-3.


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