Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

2015 ◽  
Vol 117 (2) ◽  
pp. 024304
Author(s):  
Xixing Wen ◽  
Xiangbin Zeng ◽  
Wenjun Zheng ◽  
Wugang Liao ◽  
Feng Feng
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Amorphous Silicon Carbide

Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice

2010 ◽  
Vol 10 (3) ◽  
pp. S435-S438 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shigeru Yamada ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Amorphous Silicon Carbide ◽  
Oxygen Addition

Size-Controlled Silicon Quantum Dots Superlattice for Thin-Film Solar Cell Applications

2008 ◽  
Vol 1101 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinsuke Miyajima ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Silicon Carbide ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Thin Film Solar Cell ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Quantum Dots ◽  
Hydrogenated Amorphous ◽  
Size Controlled

AbstractWe prepared size-controlled silicon quantum dots superlattices (Si-QDSLs) by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC:H) multilayers for thin-film solar cell applications. Transmission electron microscope (TEM) observation revealed that the size of silicon quantum dots can be controlled by the thickness of the a-Si1+xC:H layers. It was found that hydrogen plasma treatment (HPT) significantly enhanced the photoluminescence (PL) of the Si-QDSLs. From the results of the PL measurement, the bandgap of the Si-QDSLs can be controlled from 1.1 eV to 1.6 eV by varying the diameter of silicon quantum dots. ESR measurement indicated that HPT reduced the defect density in a Si-QDSL from 1.83 ×1019 to 1.67 sup1018 cm-3.

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide

Ion beam effects on the hydrogenated bonds of amorphous silicon carbide

2000 ◽  
Vol 166-167 ◽  
pp. 404-409 ◽  
Author(s):  
P. Musumeci ◽  
L. Calcagno ◽  
A. Makhtari ◽  
P. Baeri ◽  
G. Compagnini ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Ion Beam ◽  
Amorphous Silicon Carbide
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