Molecular and nanoscale materials and devices in electronics

2004 ◽  
Vol 111 (3) ◽  
pp. 133-157 ◽  
Author(s):  
Lei Fu ◽  
Lingchao Cao ◽  
Yunqi Liu ◽  
Daoben Zhu
Keyword(s):  
2017 ◽  
Vol 5 (23) ◽  
pp. 11840-11853 ◽  
Author(s):  
Amrita Sarkar ◽  
Morgan Stefik

The controlled fabrication of nanoscale materials can enable new behaviors and properties as well as improved performance.


1998 ◽  
Vol 21 (2) ◽  
pp. 123-146 ◽  
Author(s):  
G. Campet ◽  
A. Deshayes ◽  
J. C. Frison ◽  
N. Treuil ◽  
J. Portier

We have illustrated the important role played by the nanoscale materials in three-up-to-date energy topics.1/The solar-to-electrical energy conversion in photoelectrochemical cells: we have shown two favorable situations for which photoelectrochemical cells using porous nanocrystalline films have high efficiencies.2/The electrical energy storage in rechargeable rocking-chair lithium batteries: these systems, which use nanocrystalline materials, might be the next generation of rechargeable batteries showing higher capacity, cyclability, and safety than conventional lithium ion batteries.3/The energy saving with efficient electrochromic windows using nanocrystalline materials.


Author(s):  
Abhijit Maiti ◽  
Saurabh Mishra ◽  
Mohit Chaudhary

2017 ◽  
Vol 36 (8) ◽  
pp. 789-793 ◽  
Author(s):  
Morteza Enhessari

AbstractNanoscale FeAl2O4 was successfully synthesized via sol–gel method. The sol constituents containing iron and aluminum cations were formed homogenously in stearic acid gel (formation of organic precursor). The pure structural analysis and the size of the spinels were confirmed by X-ray diffraction (XRD). It was observed that the size of the nanoscale materials obtained at around 30–40nm. The micrographs of FeAl2O4 evidenced the homogenous and nanosize formation of spinel. The semiconducting behavior of this mixed metal oxide was observed at 3.14eV based on the band gap energy (Eg). The final nanoscale materials exhibited a superparamagnetic behavior with a saturation magnetization of 9.8 emu/g at applied field of 10 kOe.


2013 ◽  
Vol 5 (2) ◽  
Author(s):  
Shizhu Chen ◽  
Qun Zhang ◽  
Yingjian Hou ◽  
Jinchao Zhang ◽  
Xing-Jie Liang
Keyword(s):  

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