ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.
In situ scanning tunneling microscopy study of 2-mercaptobenzimidazole local inhibition effects on copper corrosion at grain boundary surface terminations
