A novel, PbS:Hg quantum dot-sensitized, highly efficient solar cell structure with triple layered TiO2 photoanode

2018 ◽  
Vol 269 ◽  
pp. 172-179 ◽  
Author(s):  
M.A.K.L. Dissanayake ◽  
T. Jaseetharan ◽  
G.K.R. Senadeera ◽  
C.A. Thotawatthage
Solar Energy ◽  
2020 ◽  
Vol 204 ◽  
pp. 617-623
Author(s):  
Hamid Latif ◽  
Saima Ashraf ◽  
M. Shahid Rafique ◽  
Ayesha Imtiaz ◽  
Abdul Sattar ◽  
...  

2015 ◽  
Vol 793 ◽  
pp. 435-439 ◽  
Author(s):  
M.A. Humayun ◽  
M.A. Rashid ◽  
F. Malek ◽  
S.B. Yaakob ◽  
A.Z. Abdullah ◽  
...  

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.


2011 ◽  
Vol 1 (4) ◽  
pp. 528-533 ◽  
Author(s):  
Hsiang-Yu Chen ◽  
Jianhui Hou ◽  
Smita Dayal ◽  
Lijun Huo ◽  
Nikos Kopidakis ◽  
...  

2015 ◽  
Vol 169 ◽  
pp. 395-401 ◽  
Author(s):  
Mahsa Jalali ◽  
Roozbeh Siavash Moakhar ◽  
Ajay Kushwaha ◽  
Gregory Kia Liang Goh ◽  
Nastaran Riahi-Noori ◽  
...  

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