Bulk electronic state of high- cuprate La2−xSrxCuO4 observed by high-energy angle integrated and resolved photoemission spectroscopy

2005 ◽  
Vol 144-147 ◽  
pp. 507-509 ◽  
Author(s):  
S. Kasai ◽  
A. Sekiyama ◽  
M. Tsunekawa ◽  
P.T. Ernst ◽  
A. Shigemoto ◽  
...  
Keyword(s):  
Electronic State ◽  
High Energy ◽  
Photoemission Spectroscopy

Growth of Transition Metal Films on AL(110) Surfaces

1995 ◽  
Vol 399 ◽  
Author(s):  
R.J. Smith ◽  
Adli A. Saleh ◽  
V. Shutthanandan ◽  
N.R. Shivaparan ◽  
V. Krasemann
Keyword(s):  
High Energy ◽  
Metal Films ◽  
Surface Strain ◽  
The Other ◽  
Photoemission Spectroscopy ◽  
Alloy Formation ◽  
Ion Scattering ◽  
X Ray ◽  
Photoelectron Diffraction ◽  
Ti Films

ABSTRACTThe growth of thin Pd, Ni, Fe and Ti films on Al(110) surfaces has been studied using high-energy ion scattering (HEIS), x-ray photoemission spectroscopy and photoelectron diffraction techniques. Of these four metals, only Ti grows as an epitaxial overlayer, while the other metals mix with the substrate to form surface alloys. In the HEIS experiments the backscattered ion yield from Al surface atoms is measured as a function of metal coverage on the Al surface. A decrease in the Al scattering is observed for Ti deposition while the other metals result in increased Al scattering, attributed to alloy formation. An explanation for the exceptional growth behavior of Ti on Al is provided using a model of surface strain associated with aluminide formation.

Dominant Role of a Pseudogap in the Physics of the Colossal Magnetoresistive Oxides

1998 ◽  
Vol 12 (29n31) ◽  
pp. 3389-3392 ◽  
Author(s):  
D. S. Dessau ◽  
T. Saitoh ◽  
C.-H. Park ◽  
Z.-X. Shen ◽  
Y. Moritomo ◽  
...  
Keyword(s):  
Dominant Role ◽  
Magnetic Ordering ◽  
High Energy ◽  
Spectral Weight ◽  
High Energy Resolution ◽  
Photoemission Spectroscopy ◽  
Colossal Magnetoresistive ◽  
Weight Density ◽  
Magnetic Ordering Temperature

We have performed direct electronic structure measurements of the colosssal magnetoresistive oxides using high energy resolution photoemission spectroscopy. A key result of these measurements is the discovery of a pseudogap which drastically supresses or completely removes the spectral weight (density of states) at the Fermi energy E F . It is shown that the pseudogap plays a dominant role in the "colossal" conductivity changes which occur across the magnetic ordering temperature. We briefly discuss possible origins for the pseudogap.

High-energy x-ray-excited valence-electron photoemission spectroscopy ofC2H2andC2D2

1988 ◽  
Vol 37 (12) ◽  
pp. 4730-4733 ◽  
Author(s):  
S. Svensson ◽  
E. Zdansky ◽  
U. Gelius ◽  
H. Ågren
Keyword(s):  
Valence Electron ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Electron Photoemission

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

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