SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

Initial Oxidation of MBE-Grown Si Surfaces

1991 ◽  
Vol 220 ◽  
Author(s):  
T. Igarashi ◽  
H. Yaguchi ◽  
K. Fujita ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Surface Oxidation ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Initial Oxidation ◽  
Mbe Growth ◽  
X Ray

We investigated the initial oxidation of MBE-grown Si (100) surfaces with atomic flatness using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 Langmuir (L) at room temperature. At elevated temperatures, the surface oxidation was substantially promoted. On the contrary, the surface oxidation was found to be substantiated on a deliberately corrugated Si surface prepared by low temperature MBE growth, even at room temperature.

Electronic structure ofNaxCu1−xIn5S8compounds: X-ray photoemission spectroscopy study and band structure calculations

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
Catherine Guillot-Deudon ◽  
Sylvie Harel ◽  
Arezki Mokrani ◽  
Alain Lafond ◽  
Nicolas Barreau ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Photoemission Spectroscopy ◽  
Spectroscopy Study ◽  
X Ray ◽  
Band Structure Calculations ◽  
Structure Calculations

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

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