Experimental evaluation of the performance and degradation of single crystalline silicon photovoltaic modules in the Saharan environment

Energy ◽  
2017 ◽  
Vol 132 ◽  
pp. 22-30 ◽  
Author(s):  
Ahmed Bouraiou ◽  
Messaoud Hamouda ◽  
Abdelkader Chaker ◽  
Salah Lachtar ◽  
Ammar Neçaibia ◽  
...  
Keyword(s):  
Experimental Evaluation ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Photovoltaic Modules ◽  
Saharan Environment

Carrier dynamics in the potential-induced degradation in single-crystalline silicon photovoltaic modules

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RG14 ◽  
Author(s):  
Mohammad Aminul Islam ◽  
Takuya Oshima ◽  
Daisuke Kobayashi ◽  
Hiroyuki Matsuzaki ◽  
Hidenari Nakahama ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Carrier Dynamics ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Photovoltaic Modules

Degradation effects on single crystalline silicon photovoltaic modules subjected to high impulse-voltages

2017 ◽  
Vol 11 (5) ◽  
pp. 563-570 ◽  
Author(s):  
Ioannis Naxakis ◽  
Christos Christodoulou ◽  
Vasiliki Perraki ◽  
Eleytheria Pyrgioti
Keyword(s):  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Photovoltaic Modules

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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