Effective minority carrier lifetime as an indicator for potential-induced degradation in p-type single-crystalline silicon photovoltaic modules

2019 ◽  
Vol 58 (10) ◽  
pp. 106507
Author(s):  
Mohammad Aminul Islam ◽  
Dong Chung Nguyen ◽  
Yasuaki Ishikawa
2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.


2001 ◽  
Vol 45 (12) ◽  
pp. 1973-1978 ◽  
Author(s):  
Mohamed Hilali ◽  
Abasifreke Ebong ◽  
Ajeet Rohatgi ◽  
Daniel L Meier

2021 ◽  
Vol 119 (18) ◽  
pp. 182106
Author(s):  
K. Shima ◽  
R. Tanaka ◽  
S. Takashima ◽  
K. Ueno ◽  
M. Edo ◽  
...  

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster

2018 ◽  
Vol 57 (8S3) ◽  
pp. 08RG14 ◽  
Author(s):  
Mohammad Aminul Islam ◽  
Takuya Oshima ◽  
Daisuke Kobayashi ◽  
Hiroyuki Matsuzaki ◽  
Hidenari Nakahama ◽  
...  

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