Review of thermal characterization techniques for salt-based phase change materials

2022 ◽  
Vol 46 ◽  
pp. 103865
Author(s):  
Swati Agarwala ◽  
K. Narayan Prabhu
Energies ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 942 ◽  
Author(s):  
Rodrigo Fuentes-Sepúlveda ◽  
Claudio García-Herrera ◽  
Diego A. Vasco ◽  
Carlos Salinas-Lira ◽  
Rubén A. Ananías

The incorporation of phase change materials (PCM) in construction components has become an alternative to reduce the effect of thermal loads in buildings with low thermal inertia. This study put together the effective heat storage capacity of an organic phase change material (O-PCM, octadecane) with the construction and production potential of Pinus radiata in Chile. The wood is impregnated with octadecane by using the Bethell method, showing that it has good retention of the impregnator, and that its size was not modified. Differential scanning calorimetry analysis (DSC) showed that the composite material could achieve fusion enthalpy values from 36 (20.8 MJ/m3) to 122 J/g (108.9 MJ/m3). The transient line heat source method used, indicated that impregnation of Pinus radiata with octadecane increases its specific heat at temperatures from 15 to 20 °C, while its thermal conductivity decreases in the radial and the tangent directions, and increases in the longitudinal direction, showing a decrease in the orthotropic behavior of the wood. The ability of Pinus radiata wood to store latent heat positioned it as a candidate material to be considered in the building industry as a heat storage system.


Author(s):  
Y. Yang ◽  
Chun-Teh Li ◽  
S. M. Sadeghipour ◽  
M. Asheghi ◽  
H. Dieker ◽  
...  

Advances in the phase change optical recording technology strongly depend on the optical and thermal optimizations of the metal/ZnS-SiO2/phase change multilayer structure, which requires accurate modeling and thermal characterization of PC media structure. In the present work, the thermal conductivities of the amorphous and crystalline Ge4Sb1Te5 (GST) phase change; and ZnS-SiO2 dielectric layers of thickness in the range of 50 nm to 300 nm have been measured using the transient thermoreflectance technique. The data are between a factor of 2–4 different from the previously measured values for thin film and bulk samples. The thermal boundary resistance at metal/ZnS-SiO2 interface is found to be around 7×10−8 m2W−1. This might have serious implications for the future phase change recording application which attempts to achieve the high writing speeds by decreasing the thickness of ZnS-SiO2 dielectric layer.   This paper was also originally published as part of the Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems.


2017 ◽  
Author(s):  
Anna Laura Pisello ◽  
Claudia Fabiani ◽  
Antonella D'Alessandro ◽  
Luisa F. Cabeza ◽  
Filippo Ubertini ◽  
...  

2006 ◽  
Vol 100 (2) ◽  
pp. 024102 ◽  
Author(s):  
Y. Yang ◽  
C.-T. Li ◽  
S. M. Sadeghipour ◽  
H. Dieker ◽  
M. Wuttig ◽  
...  

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