Modeling of the oscillating field effects on the Heβ line emission in short pulse laser-produced plasmas

2009 ◽  
Vol 5 (3) ◽  
pp. 157-161
Author(s):  
O. Peyrusse
2001 ◽  
Author(s):  
Jiri Limpouch ◽  
A. B. Iskakov ◽  
Aleksandr A. Andreev ◽  
Hidetoshi Nakano

1995 ◽  
Author(s):  
O. Peyrusse ◽  
D. Gilles ◽  
J. C. Keiffer ◽  
C. Y. Coté ◽  
Z. Jiang

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  

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