Advantage of InGaN-based light-emitting diodes using AlGaInN electron blocking layer coupled with inserting InGaN layer

Optik ◽  
2013 ◽  
Vol 124 (22) ◽  
pp. 5866-5870 ◽  
Author(s):  
Tian-Hu Wang ◽  
Jin-Liang Xu
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Ingan Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

2012 ◽  
Vol 101 (8) ◽  
pp. 081120 ◽  
Author(s):  
Ray-Ming Lin ◽  
Sheng-Fu Yu ◽  
Shoou-Jinn Chang ◽  
Tsung-Hsun Chiang ◽  
Sheng-Po Chang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Ingan Layer ◽  
Electron Blocking Layer ◽  
Light Emitting

Slightly-Doped Step-Like Electron-Blocking Layer in InGaN Light-Emitting Diodes

2012 ◽  
Vol 24 (17) ◽  
pp. 1506-1508 ◽  
Author(s):  
Yen-Kuang Kuo ◽  
Tsun-Hsin Wang ◽  
Jih-Yuan Chang ◽  
Jen-De Chen
Keyword(s):  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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