Numerical investigation of growth model for laser-induced damage in optics under high power laser irradiation

Optik ◽  
2019 ◽  
Vol 194 ◽  
pp. 163053
Author(s):  
Yi Chen ◽  
Sensen Li ◽  
Xiangyu Qu ◽  
Pengyuan Du ◽  
Lei Ding ◽  
...  
2013 ◽  
Vol 46 (23) ◽  
pp. 235501 ◽  
Author(s):  
Romain Ecault ◽  
Laurent Berthe ◽  
Michel Boustie ◽  
Fabienne Touchard ◽  
Emilien Lescoute ◽  
...  

2021 ◽  
Author(s):  
Yu Takiguchi ◽  
Hiroshi Tanaka ◽  
Tsubasa Watanabe ◽  
Yoshiyuki Ohtake ◽  
Haruyoshi Toyoda

2018 ◽  
Vol 7 (1-2) ◽  
pp. 23-31 ◽  
Author(s):  
Hao Liu ◽  
Lars Jensen ◽  
Ping Ma ◽  
Detlev Ristau

AbstractAtomic layer deposition (ALD) facilitates the deposition of coatings with precise thickness, high surface conformity, structural uniformity, and nodular-free structure, which are properties desired in high-power laser coatings. ALD was studied to produce uniform and stable Al2O3and HfO2single layers and was employed to produce anti-reflection coatings for the harmonics (1ω, 2ω, 3ω, and 4ω) of the Nd:YAG laser. In order to qualify the ALD films for high-power laser applications, the band gap energy, absorption, and element content of single layers were characterized. The damage tests of anti-reflection coatings were carried out with a laser system operated at 1ω, 2ω, 3ω, and 4ω, respectively. The damage mechanism was discussed by analyzing the damage morphology and electric field intensity difference. ALD coatings exhibit stable growth rates, low absorption, and rather high laser-induced damage threshold (LIDT). The LIDT is limited by HfO2as the employed high-index material. These properties indicate the high versatility of ALD films for applications in high-power coatings.


2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Maria Chernysheva ◽  
Mohammed Al Araimi ◽  
Graham A. Rance ◽  
Nicola J. Weston ◽  
Baogui Shi ◽  
...  

2009 ◽  
Vol 29 (3) ◽  
pp. 756-760 ◽  
Author(s):  
唐顺兴 Tang Shunxing ◽  
欧阳小平 Ouyang Xiaoping ◽  
朱宝强 Zhu Baoqiang ◽  
林尊琪 Lin Zunqi

2015 ◽  
Author(s):  
Yong Wu ◽  
Lei Zhang ◽  
Pengling Yang ◽  
Zhenbao Wang ◽  
Mengmeng Tao ◽  
...  

2018 ◽  
Vol 48 (6) ◽  
pp. 516-520
Author(s):  
N N Il'ichev ◽  
A V Sidorin ◽  
E S Gulyamova ◽  
P P Pashinin

2006 ◽  
Vol 527-529 ◽  
pp. 375-378 ◽  
Author(s):  
Toshiyuki Miyanagi ◽  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tomonori Nakamura ◽  
R. Ishii ◽  
...  

We provide evidence of shrinking of Shockley-type stacking faults (SSFs) in the SiC epitaxial layer by high temperature annealing. Photoluminescence (PL) mapping in combination with high-power laser irradiation makes it possible to investigate the formation of SSFs, which lie between a pair of partial dislocations formed by dissociation of a basal plane dislocation (BPD), without fabrication of pin diodes. Using this technique, we investigated the annealing effect on SSFs. Comparing before and after annealing at 600°C for 10 min, it became obvious that high-temperature annealing results in shrinking of the faulted area of the SSFs. The SSFs form into the same features as those before annealing when high-power laser irradiation is performed again on the same area. This result shows that the faulted area of SSFs shrinks by 600°C annealing but the nuclei of SSFs (BPDs) do not disappear.


2017 ◽  
Vol 131 ◽  
pp. 342-347
Author(s):  
T. Shibuya ◽  
N. Hayashizaki ◽  
D. Satoh ◽  
M. Yoshida

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