New developments in the Integrated Stress Determination Method and their application to rock stress data at the Äspö HRL, Sweden

2006 ◽  
Vol 43 (1) ◽  
pp. 107-126 ◽  
Author(s):  
D. Ask
2004 ◽  
Vol 854 ◽  
Author(s):  
Christophe Malhaire ◽  
Alexandru Andrei ◽  
Sebastiano Brida ◽  
Daniel Barbier

ABSTRACTThe purpose of the present work was to study the long term stress stability of thin films used in harsh environment sensors. A stress determination method, based on cantilevers curvatures measurements, checked by means of 3D finite element simulations, has been proposed. Stress measurements for dielectric (silicon oxide and nitride) and metallic (AlTi and TiW) thin films have been periodically performed at room temperature, after standard annealing (450°C / 30 min in a N2+H2 atmosphere) and after 4 weeks thermal aging at 150°C or 200°C.


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