Thin Films Stress Aging Study using Micromachined Cantilevers

2004 ◽  
Vol 854 ◽  
Author(s):  
Christophe Malhaire ◽  
Alexandru Andrei ◽  
Sebastiano Brida ◽  
Daniel Barbier
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Harsh Environment ◽  
Determination Method ◽  
Stress Determination ◽  
3D Finite Element ◽  
Aging Study ◽  
C 30

ABSTRACTThe purpose of the present work was to study the long term stress stability of thin films used in harsh environment sensors. A stress determination method, based on cantilevers curvatures measurements, checked by means of 3D finite element simulations, has been proposed. Stress measurements for dielectric (silicon oxide and nitride) and metallic (AlTi and TiW) thin films have been periodically performed at room temperature, after standard annealing (450°C / 30 min in a N2+H2 atmosphere) and after 4 weeks thermal aging at 150°C or 200°C.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

High-density plasma silicon oxide thin films grown at room-temperature

2008 ◽  
Vol 85 (5-6) ◽  
pp. 1245-1247
Author(s):  
M.E. Vlachopoulou ◽  
P. Dimitrakis ◽  
A. Tserepi ◽  
V.Em. Vamvakas ◽  
S. Koliopoulou ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
High Density ◽  
Oxide Thin Films ◽  
Density Plasma

Changes in Structure and Composition of Silicon Oxide Thin Films Induced by Ultraviolet Illumination

1996 ◽  
Vol 441 ◽  
Author(s):  
E. G. Parada ◽  
P. González ◽  
B. León ◽  
M. Pérez-Amor ◽  
M. F. DA Silva ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Hydroxyl Groups ◽  
Elastic Recoil ◽  
Oxide Thin Films ◽  
Tetrahedral Configuration ◽  
Illumination Time ◽  
Uv Illumination

AbstractThe transformation of silicon oxide thin films at room-temperature by UV-photons provided by a Xe2* incoherent excimer lamp (λ = 172 nm, Δλ = 14 nm) was studied. Films were produced at low-temperature (T = 260 °C) by ArF laser-induced CVD (LCVD) in parallel configuration from a silane/nitrous oxide/argon gas mixture. The silicon oxide films were irradiated in several consecutive steps to follow-up the modifications with the illumination time. Rutherford backscattering (RBS), infrared (IR) and X-ray photoelectron (XPS) spectroscopies, ellipsometry, and elastic recoil detection analysis (ERDA) were used to characterize the effects of the irradiation on the structure, composition, density, and hydrogen content.Under the UV illumination the as-deposited film evolves from a suboxide film (SiO1.6) to a stoichiometric silicon dioxide (SiO2), and its originally strained structure changes towards a relaxed tetrahedral configuration. The UV irradiation is able to anneal at room temperature the silicon oxide films breaking the Si-H bonds and incorporating new SiO and hydroxyl groups in a relaxed network. The hydrogen does not effuse out, but remains in the film as molecular hydrogen and/or forming silanol or water groups.

Characteristics of tin whiskers formed on sputter-deposited films—an aging study

2004 ◽  
Vol 19 (3) ◽  
pp. 689-692 ◽  
Author(s):  
J.P. Winterstein ◽  
J.B. LeBret ◽  
M.G. Norton
Keyword(s):  
Room Temperature ◽  
Continuous Process ◽  
Nucleation And Growth ◽  
Tin Whiskers ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Aging Study ◽  
Sputter Deposited ◽  
Deposited Films

Tin whiskers formed on sputter-deposited films on Muntz metal substrates have been examined following long-term aging at room temperature. It was found that while the initial annealing conditions determined the original nucleation and growth rates, whisker nucleation and growth was a continuous process and appeared to be occurring throughout the duration of the study. Whisker densities increased for all samples during aging, and samples that initially showed no whiskers during high-temperature annealing had a population density of 2.5 mm−2 after storage for 15 months.

Optoelectronic and Structural Properties of Plasma Deposited Nanocrystalline Hydrogenated Silicon Oxide Thin Films

NANO ◽  
2021 ◽  
pp. 2150115
Author(s):  
Tapati Jana ◽  
Romyani Goswami
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Structural Properties ◽  
Oxygen Content ◽  
Gas Flow ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Quantum Confinement Effect ◽  
Hydrogen Gas ◽  
Hydrogenated Silicon

To develop wide bandgap materials for solar cells and other optoelectronic devices, undoped hydrogenated silicon oxide (SiOx:H) thin films are prepared by conventional radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method. The variation of carbon dioxide dilution ([Formula: see text]) on optoelectronic and structural properties are studied thoroughly by keeping silane and hydrogen gas flow fixed. Surface morphology of the SiOx:H films have been studied by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM). Distinct silicon nanocrystallites of average diameter [Formula: see text] 3–6[Formula: see text]nm embedded uniformly in amorphous SiOx network have been observed in high resolution Transmission Electron Microscopy (HRTEM). From Fourier Transform Infrared spectra (FTIR), it is observed that oxygen content ([Formula: see text]) increases initially with [Formula: see text] and afterwards it decreases. Strong room temperature photoluminescence (PL) peak is obtained for the as-deposited films having lower oxygen content ([Formula: see text]). The origin of room temperature PL spectra and its correlation with [Formula: see text] can be explained by quantum confinement effect (QCE) theory.

Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD

2013 ◽  
Vol 740-742 ◽  
pp. 657-660 ◽  
Author(s):  
Oleg Jakovlev ◽  
Tino Fuchs ◽  
Franziska Rohlfing ◽  
Helmut Seidel
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strong Dependence ◽  
Harsh Environment ◽  
Flow Ratio ◽  
Mems Sensors ◽  
Four Point Bending ◽  
Wide Range

We introduce a novel high temperature PECVD process and use it for the deposition of silicon carbide thin films on oxidized silicon wafers at 900°C substrate temperature. A variation of the atomic composition over a wide range is achieved by altering the flow ratio of the precursors silane (SiH4) and acetylene (C2H2). XPS analysis is performed to verify the silicon to carbon ratio in the deposited layers. The resistivity of the obtained thin films shows a strong dependence on the Si/C-ratio. Four point measurements show the resistivity ranging between 5•10-3Ωcm for C-rich layers and >107Ωcm for near stoichiometric layers. We investigate the piezoresistivity of the SiC layers at room temperature under compressive and tensile strain using the four point bending method. The same method is used to analyze selected layers at elevated temperatures up to 600°C. Based on the results we evaluate the applicability of the obtained thin films for strain transducing in harsh environment MEMS sensors.

NO2 sensors with room temperature operation and long term stability using copper phthalocyanine thin films

2009 ◽  
Vol 143 (1) ◽  
pp. 246-252 ◽  
Author(s):  
N. Padma ◽  
Aditee Joshi ◽  
Ajay Singh ◽  
S.K. Deshpande ◽  
D.K. Aswal ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Copper Phthalocyanine ◽  
Term Stability ◽  
Long Term Stability ◽  
Room Temperature Operation

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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