Uncertainty in the estimation of the InAs1-xSbx intrinsic carrier concentration

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

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Temperature Dependence of Intrinsic Carrier Concentration in InSb: Direct Determination by Helicon Interferometry

Journal of Applied Physics ◽

10.1063/1.1661403 ◽

1972 ◽

Vol 43 (4) ◽

pp. 1825-1829 ◽

Cited By ~ 8

Author(s):

K. K. Chen ◽

J. K. Furdyna

Keyword(s):

Temperature Dependence ◽

Carrier Concentration ◽

Direct Determination ◽

Intrinsic Carrier Concentration

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Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.470 ◽

2010 ◽

Vol 663-665 ◽

pp. 470-472 ◽

Cited By ~ 1

Author(s):

Jian Jun Song ◽

He Ming Zhang ◽

Hui Yong Hu ◽

Xian Ying Dai ◽

Rong Xi Xuan

Keyword(s):

Band Structure ◽

Carrier Concentration ◽

Device Physics ◽

Strained Si ◽

Intrinsic Carrier Concentration ◽

Materials Properties ◽

Densities Of States ◽

Valence Bands

The intrinsic carrier concentration is the important parameter for researching strained Si1-xGex materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si1-xGex/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (Nc, Nv) and its intrinsic carrier concentration (ni) on Ge fraction (x) and temperature were obtained. The results show that ni increases significantly due to the effect of strain in strained Si1-xGex/(101)Si. Furthermore, Nc and Nv decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in Nc and Nv occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.

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