Enhanced ferroelectric and dielectric properties in (La0.7Ca0.3)MnO3-buffered (Bi0.5Na0.5)TiO3-based lead-free thin film by pulsed laser deposition

2013 ◽  
Vol 553 ◽  
pp. 142-145 ◽  
Author(s):  
C.C. Jin ◽  
F.F. Wang ◽  
Q.R. Yao ◽  
Y.X. Tang ◽  
T. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lead Free

scholarly journals High energy storage performance in lead-free BiFeO3-BaTiO3 ferroelectric thin film fabricated by pulsed laser deposition

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085005 ◽  
Author(s):  
Yuqing Hu ◽  
Qingxiu Xie ◽  
Ruihong Liang ◽  
Xiangyong Zhao ◽  
Zhiyong Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Storage ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
Laser Deposition ◽  
Lead Free ◽  
Storage Performance ◽  
High Energy Storage

Pulsed laser deposition of lead-free (Na0.5Bi0.5)1−xBaxTiO3 ferroelectric thin films with enhanced dielectric properties

2013 ◽  
Vol 278 ◽  
pp. 162-165 ◽  
Author(s):  
A. Andrei ◽  
N.D. Scarisoreanu ◽  
R. Birjega ◽  
M. Dinescu ◽  
G. Stanciu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Lead Free

Epitaxial growth and in-plane dielectric properties of DyMnO3 by pulsed-laser deposition

2019 ◽  
Vol 33 (28) ◽  
pp. 1950333
Author(s):  
Weitian Wang
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Complex Permittivity ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Manganites ◽  
Dielectric Relaxations ◽  
Measuring Frequency ◽  
Relationship Of

Perovskite manganites DyMnO3 thin film was grown epitaxially on LaAlO3 (110) substrate by using pulsed-laser deposition (PLD) technique. The film showed perfectly orthorhombic crystallization and was well-aligned with the substrates. The in-plane dielectric properties of DyMnO3 film were measured as functions of temperature (80–300 K) and frequency (120–100 kHz) by using parallel-plate interdigital electrodes (IDEs). Distinct transitions can be observed in the complex permittivity and loss tangent and the respective peaks shifted to higher temperatures as the measuring frequency increased. By the Arrhenius plots, the determined activation energy of the thermally activated dielectric relaxations was about 0.20 eV. According to the relationship of the real and imaginary parts of the complex permittivity, the in-plane dielectric properties of epitaxial DyMnO3 thin film can be described as the universal dielectric response (UDR) behavior.

Ferroelectric and dielectric properties of La0.6Sr0.4CoO3-buffered 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin film by pulsed laser deposition

2014 ◽  
Vol 588 ◽  
pp. 290-293 ◽  
Author(s):  
Qirong Yao ◽  
Feifei Wang ◽  
Chung Ming Leung ◽  
Yanxue Tang ◽  
Tao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
Sign in / Sign up

Export Citation Format

Share Document