Frequency dependent electrical characteristics of BiFeO3 MOS capacitors

2014 ◽  
Vol 583 ◽  
pp. 476-480 ◽  
Author(s):  
Senol Kaya ◽  
Ramazan Lok ◽  
Aliekber Aktag ◽  
Jan Seidel ◽  
Ercan Yilmaz
Keyword(s):  
Electrical Characteristics ◽  
Frequency Dependent ◽  
Mos Capacitors

Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

1982 ◽  
Vol 13 ◽  
Author(s):  
B-Y. Tsaur ◽  
John C. C. Fan ◽  
M. W. Geis ◽  
R. L. Chapman ◽  
S. R. J. Brueck ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Zone Melting ◽  
Dimensional Structure ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Test Circuit ◽  
Speed Performance ◽  
Thin Film Resistors ◽  
High Yields ◽  
Si Films

ABSTRACTDevice-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors

2000 ◽  
Vol 29 (8) ◽  
pp. 1027-1032 ◽  
Author(s):  
H. -F. Li ◽  
S. Dimitrijev ◽  
D. Sweatman ◽  
H. B. Harrison
Keyword(s):  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Annealing Conditions
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