Frequency dependent electrical characteristics and origin of anomalous capacitance–voltage (C–V) peak in Au/(graphene-doped PVA)/n-Si capacitors

2017 ◽  
Vol 28 (11) ◽  
pp. 7819-7826 ◽  
Author(s):  
S. A. Yerişkin ◽  
M. Balbaşı ◽  
İ. Orak
Keyword(s):  
Electrical Characteristics ◽  
Frequency Dependent ◽  
Capacitance Voltage

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods

2009 ◽  
Vol 94 (10) ◽  
pp. 102902 ◽  
Author(s):  
É. O’Connor ◽  
S. Monaghan ◽  
R. D. Long ◽  
A. O’Mahony ◽  
I. M. Povey ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Frequency Dependent ◽  
Capacitance Voltage

Frequency dependent electrical characteristics of BiFeO3 MOS capacitors

2014 ◽  
Vol 583 ◽  
pp. 476-480 ◽  
Author(s):  
Senol Kaya ◽  
Ramazan Lok ◽  
Aliekber Aktag ◽  
Jan Seidel ◽  
Ercan Yilmaz
Keyword(s):  
Electrical Characteristics ◽  
Frequency Dependent ◽  
Mos Capacitors

scholarly journals Effect of catalyst HF concentration on the electrical characteristics of ultra low-k materials

2012 ◽  
Vol 6 (2) ◽  
pp. 97-101 ◽  
Author(s):  
Zhi-Wei He ◽  
Shi-Qiu Zhu ◽  
Sheng-Li Wang ◽  
Zheng Qi ◽  
Yu-Yuan Guan
Keyword(s):  
Dielectric Constant ◽  
Sol Gel ◽  
Breakdown Field ◽  
Moisture Resistance ◽  
Electrical Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Low K

The effects of catalyst HF concentration on the dielectric and electrical properties of SiOF films are discussed. From the current density-voltage and capacitance-voltage curves, we observed that the film catalyzed with the special concentration of HF (the ratio of HF/H2O = 1/5) shows good moisture resistance, low leakage current (10-11 A/cm2 at 1 MV/cm) and high breakdown field (6 MV/cm), which can be explained by the results of Fourier transform infrared spectra. The dielectric constant value is also very low and reaches about 1.75 after annealing at the temperature of 450?C. Therefore, the concentration of HF catalyst is an important factor in the sol-gel process.

Sign in / Sign up

Export Citation Format

Share Document