Copper distribution behavior near a SiO/sub 2//Si interface by low-temperature (>400°C) annealing and its influence on electrical characteristics of MOS-capacitors

2002 ◽  
Author(s):  
K. Hozawa ◽  
T. Itoga ◽  
S. Isomae ◽  
J. Yugami ◽  
M. Ohkura
Keyword(s):  
Low Temperature ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Copper Distribution ◽  
Distribution Behavior

Germanium MOS capacitors grown on Silicon using low temperature RF-PECVD

2017 ◽  
Vol 50 (40) ◽  
pp. 405107 ◽  
Author(s):  
Ghada Dushaq ◽  
Mahmoud Rasras ◽  
Ammar Nayfeh
Keyword(s):  
Low Temperature ◽  
Mos Capacitors

Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

1982 ◽  
Vol 13 ◽  
Author(s):  
B-Y. Tsaur ◽  
John C. C. Fan ◽  
M. W. Geis ◽  
R. L. Chapman ◽  
S. R. J. Brueck ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Zone Melting ◽  
Dimensional Structure ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Test Circuit ◽  
Speed Performance ◽  
Thin Film Resistors ◽  
High Yields ◽  
Si Films

ABSTRACTDevice-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

Effect of NO annealing conditions on electrical characteristics of n-type 4H-SiC MOS capacitors

2000 ◽  
Vol 29 (8) ◽  
pp. 1027-1032 ◽  
Author(s):  
H. -F. Li ◽  
S. Dimitrijev ◽  
D. Sweatman ◽  
H. B. Harrison
Keyword(s):  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Annealing Conditions

Low-temperature electrical characteristics of Bi3.15Nd0.85Ti3O12 thin films

2007 ◽  
Vol 90 (6) ◽  
pp. 062902 ◽  
Author(s):  
Di Wu ◽  
Guoliang Yuan ◽  
Aidong Li
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Electrical Characteristics

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature

2007 ◽  
Vol 46 (11) ◽  
pp. 7309-7310 ◽  
Author(s):  
Hisashi Masui ◽  
Mathew C. Schmidt ◽  
Kwang Choong Kim ◽  
Arpan Chakraborty ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Electrical Characteristics ◽  
Light Emitting

Optimization of 4H-SiC MOS Properties with Cesium Implantation

2008 ◽  
Vol 600-603 ◽  
pp. 751-754 ◽  
Author(s):  
Y. Wang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Low Frequency ◽  
Conduction Band Edge ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Oxide Charge ◽  
Charge Densities ◽  
Effective Oxide Charge ◽  
Flatband Voltage ◽  
State Densities ◽  
Interfacial State

The effect of incorporation of cesium with implantation on the electrical characteristics of SiO2/4H-SiC interface has been evaluated using MOS capacitors. With a cesium dosage of 1012 and 3x1012 cm-2 on deposited oxide re-oxidized in steam, effective oxide charge densities of - 1.4x1012 and -7.5x1011 cm-2 respectively were extracted and a cesium implant activation percentage of 33% was estimated from flatband voltage shift. Also, corresponding interfacial state densities of 2.5x1013 and 1.8x1013 cm-2-eV-1 near the conduction band edge were extracted from High-Low frequency C-V technique, showing a decreasing Dit with increasing Cs dosage.

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