Thickness dependent structural evolution in Mg-Zn-Ca thin film metallic glasses

2018 ◽  
Vol 742 ◽  
pp. 524-535 ◽  
Author(s):  
Jian Liu ◽  
Y. Fu ◽  
Y. Tang ◽  
X.D. Wang ◽  
Q.P. Cao ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glasses ◽  
Structural Evolution

scholarly journals Morphology of cracks and shear bands in polymer-supported thin film metallic glasses

2021 ◽  
pp. 102547
Author(s):  
Oleksandr Glushko ◽  
Christoph Gammer ◽  
Lisa-Marie Weniger ◽  
Huaping Sheng ◽  
Christian Mitterer ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glasses ◽  
Shear Bands ◽  
Polymer Supported

Effects of silicon contents on the characteristics of Zr–Ti–Si–W thin film metallic glasses

2016 ◽  
Vol 618 ◽  
pp. 28-35 ◽  
Author(s):  
Po-Chi Wang ◽  
Jyh-Wei Lee ◽  
Yung-Chin Yang ◽  
Bih-Show Lou
Keyword(s):  
Thin Film ◽  
Metallic Glasses

Stress-versus temperature-induced structural evolution in metallic glasses

2013 ◽  
Vol 102 (13) ◽  
pp. 131908 ◽  
Author(s):  
H. L. Peng ◽  
M. Z. Li ◽  
W. H. Wang
Keyword(s):  
Metallic Glasses ◽  
Structural Evolution

scholarly journals Oxygen vacancy induced structural evolution of SrFeO3−x epitaxial thin film from brownmillerite to perovskite

2018 ◽  
Vol 97 (7) ◽  
Author(s):  
Seulki Roh ◽  
Seokbae Lee ◽  
Myounghoon Lee ◽  
Yu-Seong Seo ◽  
Amit Khare ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Structural Evolution ◽  
Epitaxial Thin Film

Binary Cu-Zr thin film metallic glasses with tunable nanoscale structures and properties

2018 ◽  
Vol 498 ◽  
pp. 95-102 ◽  
Author(s):  
A. Rauf ◽  
C.Y. Guo ◽  
Y.N. Fang ◽  
Z. Yu ◽  
B.A. Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glasses ◽  
Nanoscale Structures ◽  
Structures And Properties

Evolution of Nanocrystalline Silicon Layers Deposited at 150°C for Thin Film Transistor Channels

2003 ◽  
Vol 769 ◽  
Author(s):  
I-Chun Cheng ◽  
Steven Allen ◽  
Sigurd Wagner
Keyword(s):  
Thin Film ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Structural Evolution ◽  
Nanocrystalline Silicon ◽  
Crystalline Layer ◽  
Electron Field ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Made In

AbstractThin film transistors of nanocrystalline silicon (nc-Si:H) are made in the staggered topgate, bottom-source/drain geometry. To achieve both high carrier mobility and low off current, the nc-Si:H channel material must be kept thin but comprise a contiguous 10-nm thick crystalline layer at its top. We study this electrically most interesting top layer of the nc-Si:H channel film by AFM and SEM. Introducing an nc-Si:H seed layer underneath the TFT promotes the structural evolution of the nc-Si:H channel layer and raises the electron field effect mobility up to 40 cm2V-1s-1.

Sign in / Sign up

Export Citation Format

Share Document