Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates

2018 ◽  
Vol 765 ◽  
pp. 894-900 ◽  
Author(s):  
Chao-Chun Wang ◽  
Shuo-Huang Yuan ◽  
Sin-Liang Ou ◽  
Shiau-Yuan Huang ◽  
Ku-Yen Lin ◽  
...  
1996 ◽  
Vol 279 (1-2) ◽  
pp. 115-118 ◽  
Author(s):  
G.A. Battiston ◽  
R. Gerbasi ◽  
M. Porchia ◽  
R. Bertoncello ◽  
F. Caccavale

2021 ◽  
Vol 53 (5) ◽  
Author(s):  
M. Rahayi ◽  
M. H. Ehsani ◽  
Agnes C. Nkele ◽  
M. M. Shahidi ◽  
Fabian I. Ezema

1995 ◽  
Vol 25 (1-3) ◽  
pp. 482-485 ◽  
Author(s):  
Wan-Young Chung ◽  
Tae-Hoon Kim ◽  
Young-Ho Hong ◽  
Duk-Dong Lee

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.


1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala

2021 ◽  
pp. 138874
Author(s):  
Izabela Kruk ◽  
Brian L. Scott ◽  
Erik B. Watkins ◽  
Laura E. Wolfsberg

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