luminescence efficiency
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Author(s):  
Gulnur Alpyssova ◽  
Victor Lisitsyn ◽  
Mikhail Golkovski ◽  
Dossymkhan Mussakhanov ◽  
Zhakyp Karipbayev ◽  
...  

The variety of applications of yttrium-aluminum garnet (YAG)-based luminescent materials and the morphology necessary for these purposes required the development of many technologies for their synthesis. All synthesis technologies used are complex. The structural phase of yttrium-aluminum garnet is formed with any technology, at temperatures exceeding 1,500 °C. The starting materials for the synthesis are metal oxides of aluminum, yttrium and other oxides for activation and modification. It seems possible to use hard radiation to form a new phase. Radiation synthesis of ceramics is realized in less than 1 s, without the use of any additives and influences. The synthesis was carried out at the electron accelerator of the Institute of Nuclear Physics (Novosibirsk). In this work, we studied the spectral-kinetic and quantitative characteristics of luminescence for the first time obtained by the method of radiation synthesis of ceramic samples of yttrium-aluminum garnet doped with cerium with statistical processing of their values. The dependences of the reproducibility of the spectral characteristics of the luminescence of the samples on the preliminary preparation of the charge for synthesis have been investigated. Several cycles of luminophore brightness studies have been performed. It is shown that the obtained ceramics based on yttrium-aluminum garnet doped with cerium possesses the required spectral-kinetic properties, and the efficiency of conversion of the chip radiation into luminescence is achieved, which is comparable to that available in commercial phosphors. The maximum measured values of the position of the bands are from 553.5 to 559.6 nm. Brightness values range from 4,720 to 1,960 cd/m2. It was found that the main reason for the scatter in the characteristics of the luminescent properties of ceramics of yttrium-aluminum garnet, activated by cerium obtained by radiation assisted synthesis is the high rate of synthesis and, especially, the high rate of cooling of the samples.


Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1390
Author(s):  
Jie Zhang ◽  
Wei Liu ◽  
Shuyuan Zhang

The electroluminescence (EL) properties of InGaN/AlGaN ultraviolet light-emitting multiple quantum wells (MQWs) with identical average In content but different In gradients (In content increases linearly, along the growth direction) are investigated numerically. It is found that the luminescence efficiency is improved, and the EL spectral peak wavelength becomes longer for the MQW sample with a larger In gradient. Since the influence of In gradient is different for the conduction and valence bands in InGaN layers, the distribution of electrons and holes in QWs may be changed, leading to a redshift of EL spectra. In particular, when the In gradient increases, the overlap integral of electron-hole wavefunction in InGaN QWs increases, resulting in a higher radiative recombination rate and an enhanced EL intensity.


Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 6852
Author(s):  
Toyotaka Nakae ◽  
Hiroto Miyabe ◽  
Masaki Nishio ◽  
Teppei Yamada ◽  
Yoshinori Yamanoi

The synthesis, structural, and photophysical investigations of CuI complexes with a disilanylene-bridged bispyridine ligand 1 are herein presented. Dinuclear (2) and ladder-like (3) octanuclear copper(I) complexes were straightforwardly prepared by exactly controlling the ratio of CuI/ligand 1. Single-crystal X-ray analysis confirmed that dinuclear complex 2 had no apparent π…π stacking whereas octanuclear complex 3 had π…π stacking in the crystal packing. In the solid state, the complexes display yellow-green (λem = 519 nm, Φ = 0.60, τ = 11 µs, 2) and blue (λem = 478 nm, Φ = 0.04, τ = 2.6 µs, 3) phosphorescence, respectively. The density functional theory calculations validate the differences in their optical properties. The difference in the luminescence efficiency between 2 and 3 is attributed to the presence of π…π stacking and the different luminescence processes.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yuhao Ben ◽  
Feng Liang ◽  
Degang Zhao ◽  
Jing Yang ◽  
Zongshun Liu ◽  
...  

AbstractIn this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.


Author(s):  
Hanno Küpers ◽  
Ryan B. Lewis ◽  
Pierre Corfdir ◽  
Michael Niehle ◽  
Timur Flissikowski ◽  
...  

2021 ◽  
Vol 119 (2) ◽  
pp. 023301
Author(s):  
Jiangdan Zhang ◽  
Haisheng Yang ◽  
Yujie Zhang ◽  
Xiaodong Liu ◽  
Yaqian Zhang ◽  
...  

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