Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

2022 ◽  
Author(s):  
Duyoung Yang ◽  
Byungsoo Kim ◽  
Tae Hoon Eom ◽  
Yongjo Park ◽  
Ho Won Jang
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Gallium Oxide ◽  
Optoelectronic Devices ◽  
Oxide Thin Films ◽  
Sapphire Substrates

Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates

2018 ◽  
Vol 765 ◽  
pp. 894-900 ◽  
Author(s):  
Chao-Chun Wang ◽  
Shuo-Huang Yuan ◽  
Sin-Liang Ou ◽  
Shiau-Yuan Huang ◽  
Ku-Yen Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Oxide Thin Films ◽  
Sapphire Substrates

Epitaxial growth of titanium oxide thin films on c-cut and α-cut sapphire substrates

2007 ◽  
Vol 601 (23) ◽  
pp. 5649-5658 ◽  
Author(s):  
N. Sbaï ◽  
J. Perrière ◽  
W. Seiler ◽  
E. Millon
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Titanium Oxide ◽  
Oxide Thin Films ◽  
Sapphire Substrates

scholarly journals Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Gallium Oxide ◽  
Electronic Transitions ◽  
Oxide Thin Films ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

scholarly journals EPITAXIAL GROWTH OF PEROVSKITE OXIDE THIN FILMS

1999 ◽  
Vol 48 (10) ◽  
pp. 1917
Author(s):  
LIAN GUI-JUN ◽  
LI MEI-YA ◽  
KANG JIN-FENG ◽  
GUO JIAN-DONG ◽  
SUN YUN-FENG ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Perovskite Oxide ◽  
Oxide Thin Films ◽  
Perovskite Oxide Thin Films

Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

2019 ◽  
Vol 216 (20) ◽  
pp. 1900098 ◽  
Author(s):  
Nicholas Blumenschein ◽  
Tania Paskova ◽  
John F. Muth
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Oxide Thin Films ◽  
Growth Pressure ◽  
Uv Photodetectors ◽  
Deep Uv

scholarly journals Optical constants of titanium-doped gallium oxide thin films

2019 ◽  
Vol 96 ◽  
pp. 109223 ◽  
Author(s):  
Sandeep Manandhar ◽  
Anil K. Battu ◽  
Cristian Orozco ◽  
C.V. Ramana
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Optical Constants ◽  
Oxide Thin Films

Heteroepitaxial growth of single-phase ε-Ga2O3 thin films on c-plane sapphire by mist chemical vapor deposition using a NiO buffer layer

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6236-6242 ◽  
Author(s):  
Y. Arata ◽  
H. Nishinaka ◽  
D. Tahara ◽  
M. Yoshimoto
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Single Phase ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Sapphire Substrates

In this study, single-phase ε-gallium oxide (Ga2O3) thin films were heteroepitaxially grown on c-plane sapphire substrates.

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