A one-level FETI method for the drift–diffusion-Poisson system with discontinuities at an interface

2013 ◽  
Vol 243 ◽  
pp. 74-86 ◽  
Author(s):  
Stefan Baumgartner ◽  
Clemens Heitzinger
Author(s):  
Jean Dolbeault ◽  
Xingyu Li

Abstract This paper is devoted to logarithmic Hardy–Littlewood–Sobolev inequalities in the 2D Euclidean space, in the presence of an external potential with logarithmic growth. The coupling with the potential introduces a new parameter, with two regimes. The attractive regime reflects the standard logarithmic Hardy–Littlewood–Sobolev inequality. The 2nd regime corresponds to a reverse inequality, with the opposite sign in the convolution term, which allows us to bound the free energy of a drift–diffusion–Poisson system from below. Our method is based on an extension of an entropy method proposed by E. Carlen, J. Carrillo, and M. Loss, and on a nonlinear diffusion equation.


2008 ◽  
Vol 18 (03) ◽  
pp. 443-487 ◽  
Author(s):  
HAO WU ◽  
PETER A. MARKOWICH ◽  
SONGMU ZHENG

In this paper a time-dependent as well as a stationary drift-diffusion-Poisson system for semiconductors are studied. Global existence and uniqueness of weak solution of the time-dependent problem are proven and we also prove the existence and uniqueness of the steady state. It is shown that as time tends to infinity, the solution of the time-dependent problem will converge to a unique equilibrium. Due to the presence of recombination-generation rate R in our drift-diffusion-Poisson model, the work of this paper in some sense extends the results in the previous literature (on both time-dependent problem and stationary problem).


2020 ◽  
Vol 120 (3-4) ◽  
pp. 301-318
Author(s):  
Yuehong Feng ◽  
Xin Li ◽  
Shu Wang

This paper is concerned with smooth solutions of the non-isentropic Euler–Poisson system for ion dynamics. The system arises in the modeling of semi-conductor, in which appear one small parameter, the momentum relaxation time. When the initial data are near constant equilibrium states, with the help of uniform energy estimates and compactness arguments, we rigorously prove the convergence of the system for all time, as the relaxation time goes to zero. The limit system is the drift-diffusion system.


2000 ◽  
Vol 10 (03) ◽  
pp. 351-360 ◽  
Author(s):  
CORRADO LATTANZIO

The aim of this paper is the study of the relaxation limit of the 3-D bipolar hydrodynamic model for semiconductors. We prove the convergence for the weak solutions to the bipolar Euler–Poisson system towards the solutions to the bipolar drifthyphen;diffusion system, as the relaxation time tends to zero.


2021 ◽  
Vol 0 (0) ◽  
pp. 0
Author(s):  
Mingying Zhong

<p style='text-indent:20px;'>In the present paper, we study the diffusion limit of the classical solution to the Vlasov-Poisson-Fokker-Planck (VPFP) system with initial data near a global Maxwellian. We prove the convergence and establish the optimal convergence rate of the global strong solution to the VPFP system towards the solution to the drift-diffusion-Poisson system based on the spectral analysis with precise estimation on the initial layer.</p>


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