Studies of free‐to‐bound acceptor photoluminescence in an applied magnetic field for undoped GaAs grown by metalorganic vapor‐phase epitaxy and molecular‐beam epitaxy

1986 ◽  
Vol 59 (8) ◽  
pp. 2828-2832 ◽  
Author(s):  
S. Zemon ◽  
P. Norris ◽  
E. S. Koteles ◽  
G. Lambert
Keyword(s):  
Magnetic Field ◽  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Applied Magnetic Field ◽  
Molecular Beam ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Undoped Gaas

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

2004 ◽  
Vol 262 (1-4) ◽  
pp. 145-150 ◽  
Author(s):  
V. Potin ◽  
E. Hahn ◽  
A. Rosenauer ◽  
D. Gerthsen ◽  
B. Kuhn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Structures

Interface structures in quantum wells controlled by metalorganic vapor phase epitaxy and molecular beam epitaxy

1995 ◽  
Vol 146 (1-4) ◽  
pp. 379-383 ◽  
Author(s):  
N. Inoue ◽  
K. Ikuta ◽  
M. Shinohara ◽  
J. Osaka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Interface Structures

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

2012 ◽  
Vol 100 (18) ◽  
pp. 181603 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
L. Janicki ◽  
J. Misiewicz ◽  
G. Cywinski ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Fermi Level Position

Modeling of molecular‐beam epitaxy and metalorganic vapor‐phase epitaxy on nonplanar surfaces

1993 ◽  
Vol 73 (11) ◽  
pp. 7358-7369 ◽  
Author(s):  
Mitsuru Ohtsuka ◽  
Akira Suzuki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

2016 ◽  
Vol 456 ◽  
pp. 121-132 ◽  
Author(s):  
D.F. Storm ◽  
M.T. Hardy ◽  
D.S. Katzer ◽  
N. Nepal ◽  
B.P. Downey ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Critical Issues

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

2002 ◽  
Vol 92 (1) ◽  
pp. 338-345 ◽  
Author(s):  
M. J. Manfra ◽  
N. G. Weimann ◽  
J. W. P. Hsu ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Molecular Beam ◽  
High Mobility ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique

2007 ◽  
Vol 36 (8) ◽  
pp. 864-870 ◽  
Author(s):  
Janet E. Hails ◽  
Andrew M. Keir ◽  
Andrew Graham ◽  
Gerald M. Williams ◽  
Jean Giess
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Phase ◽  
Silicon Substrate ◽  
Molecular Beam ◽  
Defect Formation ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic
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