Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 734-738 ◽  
Author(s):  
S.M. Wang ◽  
Y.Q. Wei ◽  
X.D. Wang ◽  
Q.X. Zhao ◽  
M. Sadeghi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold

Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (21) ◽  
pp. 3386-3388 ◽  
Author(s):  
Wei Li ◽  
Tomi Jouhti ◽  
Chang Si Peng ◽  
Janne Konttinen ◽  
Pekka Laukkanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold
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