Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

2000 ◽  
Vol 12 (2) ◽  
pp. 128-130 ◽  
Author(s):  
X. Yang ◽  
J.B. Heroux ◽  
M.J. Jurkovic ◽  
W.I. Wang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold

Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (21) ◽  
pp. 3386-3388 ◽  
Author(s):  
Wei Li ◽  
Tomi Jouhti ◽  
Chang Si Peng ◽  
Janne Konttinen ◽  
Pekka Laukkanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold

High-performance 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy

2002 ◽  
Author(s):  
Wei Li ◽  
Chang S. Peng ◽  
Tomi Jouhti ◽  
Janne Konttinen ◽  
Emil-Mihai Pavelescu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well
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