Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 11B) ◽  
pp. L1935-L1937 ◽  
Author(s):  
Sei-ichi Miyazawa ◽  
Yoshinobu Sekiguchi ◽  
Natsuhiko Mizutani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well

Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates

1987 ◽  
Vol 26 (Part 2, No. 4) ◽  
pp. L302-L305 ◽  
Author(s):  
Toshiro Hayakawa ◽  
Masafumi Kondo ◽  
Takahiro Suyama ◽  
Kosei Takahashi ◽  
Saburo Yamamoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Current Density ◽  
Molecular Beam ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Quantum Well Lasers

Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (21) ◽  
pp. 3386-3388 ◽  
Author(s):  
Wei Li ◽  
Tomi Jouhti ◽  
Chang Si Peng ◽  
Janne Konttinen ◽  
Pekka Laukkanen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Low Threshold
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