Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells

2007 ◽  
Vol 298 ◽  
pp. 500-503 ◽  
Author(s):  
Da-Bing Li ◽  
Masakazu Aoki ◽  
Takuya Katsuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Si Doping ◽  
Growth Interruption

Structural and optical properties of InGaN/GaN multiple quantum wells: The effect of the number of InGaN/GaN pairs

2000 ◽  
Vol 221 (1-4) ◽  
pp. 368-372 ◽  
Author(s):  
Dong-Joon Kim ◽  
Yong-Tae Moon ◽  
Keun-Man Song ◽  
Chel-Jong Choi ◽  
Young-Woo Ok ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

2005 ◽  
Vol 278 (1-4) ◽  
pp. 397-401 ◽  
Author(s):  
X.Y. Liu ◽  
J.F. Fälth ◽  
T.G. Andersson ◽  
P. Holmström ◽  
P. Jänes ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties

Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE

2007 ◽  
Vol 4 (7) ◽  
pp. 2494-2497
Author(s):  
Da-Bing Li ◽  
Takuya Katsuno ◽  
Masakazu Aoki ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Structural And Optical Properties ◽  
Si Doped

Effects of Si Doping in the Barriers on the Optical Properties of In$_{0.15}$Ga$_{0.85}$N/In$_{0.015}$Ga$_{0.985}$N Multiple Quantum Wells

2000 ◽  
Vol 37 (6) ◽  
pp. 989 ◽  
Author(s):  
Ryu Mee-Yi ◽  
Yu Young Jun ◽  
Yu Phil Won ◽  
Shin Eun-joo ◽  
Lee Joo In ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doping
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