Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy

Q.M. Fu; T. Peng; C. Liu

doi:10.1016/j.jcrysgro.2009.04.045

Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2009.04.045 ◽

2009 ◽

Vol 311 (14) ◽

pp. 3553-3556 ◽

Cited By ~ 3

Author(s):

Q.M. Fu ◽

T. Peng ◽

C. Liu

Keyword(s):

Molecular Beam Epitaxy ◽

Real Time ◽

Molecular Beam ◽

Crystalline Quality

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GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583761 ◽

1987 ◽

Vol 5 (3) ◽

pp. 822 ◽

Cited By ~ 32

Author(s):

N. Chand

Keyword(s):

Molecular Beam Epitaxy ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Molecular Beam ◽

Avalanche Photodiodes ◽

Crystalline Quality

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Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy

physica status solidi (c) ◽

10.1002/pssc.200303358 ◽

2003 ◽

Vol 0 (7) ◽

pp. 2529-2532

Author(s):

N. Onojima ◽

J. Suda ◽

T. Kimoto ◽

H. Matsunami

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Growth Mode ◽

Crystalline Quality ◽

Initial Growth ◽

Surface Control

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Improved Crystalline Quality of Molecular Beam Epitaxy Grown GaAs-on-Si Epilayer through the Use of Low-Temperature GaAs Intermediate Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l405 ◽

1994 ◽

Vol 33 (Part 2, No. 3B) ◽

pp. L405-L408 ◽

Cited By ~ 6

Author(s):

Cheng Chiang Phua ◽

Tow Chong Chong ◽

Wai Shing Lau

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Intermediate Layer ◽

Molecular Beam ◽

Crystalline Quality ◽

Gaas On Si ◽

Low Temperature Gaas

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Improved crystalline quality of AlAsxSb1−xgrown on InAs by modulated molecular‐beam epitaxy

Applied Physics Letters ◽

10.1063/1.112424 ◽

1994 ◽

Vol 65 (25) ◽

pp. 3239-3241 ◽

Cited By ~ 17

Author(s):

Yong‐Hang Zhang ◽

David H. Chow

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystalline Quality

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Uniformity and crystalline quality of CoSi2/Si heterostructures grown by molecular beam epitaxy and reactive deposition epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583143 ◽

1985 ◽

Vol 3 (2) ◽

pp. 596 ◽

Cited By ~ 34

Author(s):

Y. C. Kao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystalline Quality ◽

Reactive Deposition

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Effect ofin situThermal Annealing on Crystalline Quality of Ge Layers Grown by Molecular Beam Epitaxy on Si (100)

Japanese Journal of Applied Physics ◽

10.1143/jjap.26.l597 ◽

1987 ◽

Vol 26 (Part 2, No. 5) ◽

pp. L597-L599 ◽

Cited By ~ 8

Author(s):

Yukio Fukuda ◽

Yoshitaka Kohama

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystalline Quality

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Effect of O/Zn Flux Ratio on Crystalline Quality of ZnO Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2241 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2241-2244 ◽

Cited By ~ 79

Author(s):

Hiroyuki Kato ◽

Michihiro Sano ◽

Kazuhiro Miyamoto ◽

Takafumi Yao

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Flux Ratio ◽

Crystalline Quality ◽

Zno Films

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Strong impact of the initial III/V ratio on the crystalline quality of an AlN layer grown by rf-plasma-assisted molecular-beam epitaxy

Applied Physics Express ◽

10.7567/apex.9.025502 ◽

2016 ◽

Vol 9 (2) ◽

pp. 025502 ◽

Cited By ~ 5

Author(s):

Mitsuaki Kaneko ◽

Tsunenobu Kimoto ◽

Jun Suda

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystalline Quality ◽

Rf Plasma ◽

Strong Impact

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Influence of the desorption and growth temperatures on the crystalline quality of molecular-beam epitaxy InAlAs layers

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586181 ◽

1992 ◽

Vol 10 (5) ◽

pp. 2148 ◽

Cited By ~ 13

Author(s):

F. Peiró

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Crystalline Quality

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Control of the crystalline quality of wurtzitic GaN films deposited on γ-LiAlO2 by ion-beam assisted molecular-beam epitaxy

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2007.01.025 ◽

2007 ◽

Vol 257 (1-2) ◽

pp. 315-319 ◽

Cited By ~ 3

Author(s):

J.W. Gerlach ◽

A. Hofmann ◽

T. Höche ◽

B. Rauschenbach

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Ion Beam ◽

Crystalline Quality

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