Асимптотическая стадия роста автокаталитических III-V нитевидных нанокристаллов методом молекулярно-пучковой эпитаксии

A new analytic theory is developed for asymptotic stage of self-catalyzed growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE), where NWs collect all group III atoms deposited from vapor. The shadowing NW length is derived which corresponds for the full shadowing of the substrate surface in MBE. The NW length and radius are derived depending on the effective deposition thickness and MBE growth parameters. It is shown that the NW length increases, and their length decreases with decreasing the array pitch and increasing the V/III flux ratio.

Improving Planet Detection with Disk Modeling: Keck/NIRC2 Imaging of the HD 34282 Single-armed Protoplanetary Disk

Formed in protoplanetary disks around young stars, giant planets can leave observational features such as spirals and gaps in their natal disks through planet–disk interactions. Although such features can indicate the existence of giant planets, protoplanetary disk signals can overwhelm the innate luminosity of planets. Therefore, in order to image planets that are embedded in disks, it is necessary to remove the contamination from the disks to reveal the planets possibly hiding within their natal environments. We observe and directly model the detected disk in the Keck/NIRC2 vortex coronagraph L′-band observations of the single-armed protoplanetary disk around HD 34282. Despite a nondetection of companions for HD 34282, this direct disk modeling improves planet detection sensitivity by up to a factor of 2 in flux ratio and ∼10 M Jupiter in mass. This suggests that performing disk modeling can improve directly imaged planet detection limits in systems with visible scattered light disks, and can help to better constrain the occurrence rates of self-luminous planets in these systems.

Layering and vertical transport in sheared double-diffusive convection in the diffusive regime

A sequence of two- and three-dimensional simulations are conducted for the double-diffusive convection (DDC) flows in the diffusive regime subjected to an imposed shear. For a wide range of control parameters, and for sufficiently strong perturbation of the conductive initial state, staircase-like structures spontaneously develop, with relatively well-mixed layers separated by sharp interfaces of enhanced scalar gradient. Such staircases appear to be robust even in the presence of strong shear over very long times, with early-time coarsening of the observed layers. For the same set of control parameters, different asymptotic layered states, with markedly different vertical scalar fluxes, can arise for different initial perturbation structures. The imposed shear significantly spatio-temporally modifies the vertical transport of the various scalars. The flux ratio $\gamma ^*$ (i.e. the ratio between the density fluxes due to the total salt flux and the total heat flux) is found, at steady state, to be essentially equal to the square root of the ratio of the salt diffusivity to the thermal diffusivity, consistent with the physical model proposed by Linden & Shirtcliffe (J. Fluid Mech., vol. 87, 1978, pp. 417–432) and the variational arguments presented by Stern (J. Fluid Mech., vol. 114, 1982, pp. 105–121) for unsheared double-diffusive convection.

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

The intrinsic magnetic topological insulator MnBi2Te4 has attracted much attention due to its special magnetic and topological properties. To date, most reports have focused on bulk or flake samples. For material integration and device applications, the epitaxial growth of MnBi2Te4 film in nanoscale is more important but challenging. Here, we report the growth of self-regulated MnBi2Te4 films by the molecular beam epitaxy. By tuning the substrate temperature to the optimal temperature for the growth surface, the stoichiometry of MnBi2Te4 becomes sensitive to the Mn/Bi flux ratio. Excessive and deficient Mn resulted in the formation of a MnTe and Bi2Te3 phase, respectively. The magnetic measurement of the 7 SL MnBi2Te4 film probed by the superconducting quantum interference device (SQUID) shows that the antiferromagnetic order occurring at the Néel temperature 22 K is accompanied by an anomalous magnetic hysteresis loop along the c-axis. The band structure measured by angle-resolved photoemission spectroscopy (ARPES) at 80 K reveals a Dirac-like surface state, which indicates that MnBi2Te4 has topological insulator properties in the paramagnetic phase. Our work demonstrates the key growth parameters for the design and optimization of the synthesis of nanoscale MnBi2Te4 films, which are of great significance for fundamental research and device applications involving antiferromagnetic topological insulators.

Analysis of Storage Effects in the Recirculation Zone Based on the Junction Angle of Channel Confluence

In this study, numerical simulations using the Environmental Fluid Dynamics Code model were conducted to elucidate the effects of flow structures in the recirculation zone on solute storage based on the junction angle. Numerical simulations were performed at a junction angle of 30° to 90° with a momentum flux ratio of 1.62. The simulation results revealed that an increase in the junction angle caused the recirculation zone length and width to increase and strengthened the development of helical motion. The helical motion increased the vertical gradient of the mixing layer and the mixing metric of the dosage curves. The recirculation zone accumulated the solute as a storage zone, which formed a long tail in the concentration curves. The interaction between the helical motion and recirculation zone affected the transverse mixing, such that the transverse dispersion had a positive relationship with the helical motion intensity and a negative relationship with the recirculation zone size. Transverse mixing exhibited an inverse relationship with the mass exchange rate of the recirculation zone. These results indicate that the transverse dispersion is replaced by mixing due to strongly developed storage zones.

Numerical Investigation on the Cavity Implementation Methods in Trapped Vortex Combustor

Well-stabilized vortices inside a physical cavity using direct injection of reactants can be used to provide stable combustion with performance benefits. The adaptation of the Trapped Vortex Combustion (TVC) concept involves the placement of the cavity-based flame stabilization device in the main duct of the combustor using annular or planar geometric configurations. In this work, we compare the performance of inner annular, outer annular and planar arrangements of the cavity with dual-vortex structure configuration enabled by a single injection port on the upstream wall of the cavity. The comparison is done using Reynolds Averaged Navier-Stokes (RANS) simulations. The effect of cavity implementation methods on the flame stabilization, temperature distribution at the exit of the combustor and pollutant emissions are analyzed with three combustor operating conditions based on the flow parameters. Significant differences in the flame stabilization are observed in the combustors due to the dissimilarity of the velocity and fuel distribution. The parameter, jet momentum flux ratio, denoted by J, is defined based on the inlet conditions and the estimate of actual cavity flow velocity from numerical results. This parameter is used to correlate the combustor performance among the various configurations studied. The inner annular combustor can be scaled to higher power by increasing the combustor radius (R) with same cavity size, flow parameters and chemical parameters, however, the flame stabilization and performance are affected by the geometric parameters, combustor radius (R) and cavity depth (D). Strategies to scale-up the combustor to obtain the required performance are discussed along with the challenges faced in comparing results of the various configurations studied.

Bi Incorporation and Segregation in the MBE-Grown GaAs-(Ga,Al)As-Ga(As,Bi) Core-Shell Nanowires

Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(100) substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.

Ionizing radiation from AGNs at z > 3.3 with the Subaru Hyper Suprime-Cam Survey and the CFHT Large Area U-band Deep Survey (CLAUDS)

We use deep and wide imaging data from the CFHT Large Area U-band Deep Survey (CLAUDS) and the Hyper Suprime-Cam Subaru Strategic Program (HSC-SSP) to constrain the ionizing radiation (Lyman Continuum; LyC) escape fraction from AGNs at z ∼ 3–4. For 94 AGNs with spectroscopic redshifts at 3.3 < z < 4.0, we use their U-band / i-band flux ratios to estimate LyC transmission of individual AGNs. The distribution of their LyC transmission shows values lower than the range of LyC transmission values for IGM of the same redshift range, which suggests that LyC escape fraction of AGNs at z > 3.3 is considerably lower than unity in most cases. We do not find any trend in LyC transmission values depending on their UV luminosities. Based on the photometry of stacked images we find the average flux ratio of LyC and non-ionizing UV photons escaping from the objects (fLyC/fUV)out = 0.182 ± 0.043 for AGNs at 3.3 < z < 3.6, which corresponds to LyC escape fraction fesc = 0.303 ± 0.072 if we assume a fiducial intrinsic SED of AGN. Based on the estimated LyC escape fraction and the UV luminosity function of AGNs, we argue that UV-selected AGNs’ contribution to the LyC emissivity at the epoch is minor, although the size of their contribution largely depends on the shape of the UV luminosity function.

The ultra-hot-Jupiter KELT-16 b: Dynamical Evolution and Atmospheric Properties

We present broad-band photometry of 30 planetary transits of the ultra-hot Jupiter KELT-16 b, using five medium-class telescopes. The transits were monitored through standard B, V, R, I filters and four were simultaneously observed from different places, for a total of 36 new light curves. We used these new photometric data and those from the TESS space telescope to review the main physical properties of the KELT-16 planetary system. Our results agree with previous measurements but are more precise. We estimated the mid-transit times for each of these transits and combined them with others from the literature to obtain 69 epochs, with a time baseline extending over more than four years, and searched for transit time variations. We found no evidence for a period change, suggesting a lower limit for orbital decay at 8 Myr, with a lower limit on the reduced tidal quality factor of $Q^{\prime }_{\star }>(1.9 \pm 0.8) \times 10^5$ with $95\%$ confidence. We built up an observational, low-resolution transmission spectrum of the planet, finding evidence of the presence of optical absorbers, although with a low significance. Using TESS data, we reconstructed the phase curve finding that KELT-16 b has a phase offset of 25.25 ± 14.03 ○E, a day- and night-side brightness temperature of 3190 ± 61 K and 2668 ± 56 K, respectively. Finally, we compared the flux ratio of the planet over its star at the TESS and Spitzer wavelengths with theoretical emission spectra, finding evidence of a temperature inversion in the planet’s atmosphere, the chemical composition of which is preferably oxygen-rich rather than carbon-rich.

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τPL), and electron spin relaxation times (τs) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature Tg (430–600 °C) and a high V/III flux ratio using As2. At 530 °C < Tg < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τPL~40 ns at RT, one order of magnitude longer than those reported so far. Long τs (~6 ns) is also observed at RT.