Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy

ABSTRACTMetastable defects have been created by light exposure in thin films of a-Si:H. The samples have been characterized by Photothermal Deflection Spectroscopy, Electron Spin Resonance, dark- and photo-conductivity. The experimental results are consistent with numerical calculations with a recombination model involving band tails and one class of correlated dangling-bond states. The effects of light-soaking on the ligh intensity and defect density dependences of photoconductivity are reproduced by the calculations. The model allows to explain the experimental trends by changes in the electronic occupation of the gap states produced by light-induced defects.

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Gap-States Studies in a-Si:N:H by Photothermal Deflection Spectroscopy and Photoconductivity

Seventh E.C. Photovoltaic Solar Energy Conference ◽

10.1007/978-94-009-3817-5_100 ◽

1987 ◽

pp. 567-571

Author(s):

E. Morgado ◽

E. Bustarret

Keyword(s):

Photothermal Deflection Spectroscopy ◽

Photothermal Deflection ◽

Gap States

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Hydrogenated Amorphous Silicon Films by the Pyrolysis of Disilane(1)

MRS Proceedings ◽

10.1557/proc-49-21 ◽

1985 ◽

Vol 49 ◽

Cited By ~ 1

Author(s):

T. L. Chu ◽

Shirley S. Chu ◽

S. T. Ang ◽

D. H. Lo ◽

A. Duong ◽

...

Keyword(s):

Thermal Decomposition ◽

Amorphous Silicon ◽

Deposition Rate ◽

Hydrogenated Amorphous Silicon ◽

Conductivity Ratio ◽

Helium Flow ◽

Photothermal Deflection Spectroscopy ◽

Photothermal Deflection ◽

Gap States ◽

Hydrogenated Amorphous

AbstractThe thermal decomposition of disilane in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous silicon (a-Si:H) films on the surface of several substrates at 450°-500°C. The concentration of disilane in the reaction mixture has been found to affect strongly the deposition rate and the photoconductivity of a-Si:H films. The AMI conductivity of a-Si:H films increases with increasing disilane concentration and approaches lO−5(ohm-cm)−l at disilane concentrations higher than about 4%, and the conductivity ratio is about lO5. The density of gap states in CVD a-Si:H films have been determined by the photothermal deflection spectroscopy, capacitancetemperature, capacitance-frequency, and space-charged-limited current measurements with similar results.

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Gap-states distribution in amorphous-silicon films as obtained by photothermal deflection spectroscopy

Physical Review B ◽

10.1103/physrevb.45.14108 ◽

1992 ◽

Vol 45 (24) ◽

pp. 14108-14113 ◽

Cited By ~ 12

Author(s):

G. Amato ◽

F. Fizzotti

Keyword(s):

Amorphous Silicon ◽

Silicon Films ◽

Photothermal Deflection Spectroscopy ◽

Photothermal Deflection ◽

Gap States

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Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy

Physical Review B ◽

10.1103/physrevb.25.5559 ◽

1982 ◽

Vol 25 (8) ◽

pp. 5559-5562 ◽

Cited By ~ 531

Author(s):

Warren B. Jackson ◽

Nabil M. Amer

Keyword(s):

Amorphous Silicon ◽

Direct Measurement ◽

Hydrogenated Amorphous Silicon ◽

Photothermal Deflection Spectroscopy ◽

Photothermal Deflection ◽

Hydrogenated Amorphous ◽

Gap State

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Observation of the transient expansion of heated surfaces by picosecond photothermal deflection spectroscopy

Optics Letters ◽

10.1364/ol.13.000713 ◽

1988 ◽

Vol 13 (9) ◽

pp. 713 ◽

Cited By ~ 39

Author(s):

Joshua E. Rothenberg

Keyword(s):

Photothermal Deflection Spectroscopy ◽

Photothermal Deflection

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Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

International Journal of Photoenergy ◽

10.1155/2012/418924 ◽

2012 ◽

Vol 2012 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

S. Ktifa ◽

M. Ghrib ◽

F. Saadallah ◽

H. Ezzaouia ◽

N. Yacoubi

Keyword(s):

Optical Properties ◽

Energy Gap ◽

Chemical Vapor ◽

Nanocrystalline Silicon ◽

Porous Aluminum ◽

Force Microscopy ◽

Photothermal Deflection Spectroscopy ◽

Atomic Force ◽

Photothermal Deflection ◽

Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

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