Gap-states distribution in amorphous-silicon films as obtained by photothermal deflection spectroscopy

1992 ◽  
Vol 45 (24) ◽  
pp. 14108-14113 ◽  
Author(s):  
G. Amato ◽  
F. Fizzotti
Keyword(s):  
Amorphous Silicon ◽  
Silicon Films ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Gap States

Hydrogenated Amorphous Silicon Films by the Pyrolysis of Disilane(1)

1985 ◽  
Vol 49 ◽  
Author(s):  
T. L. Chu ◽  
Shirley S. Chu ◽  
S. T. Ang ◽  
D. H. Lo ◽  
A. Duong ◽  
...  
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Hydrogenated Amorphous Silicon ◽  
Conductivity Ratio ◽  
Helium Flow ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Gap States ◽  
Hydrogenated Amorphous

AbstractThe thermal decomposition of disilane in a hydrogen or helium flow has been used for the deposition of hydrogenated amorphous silicon (a-Si:H) films on the surface of several substrates at 450°-500°C. The concentration of disilane in the reaction mixture has been found to affect strongly the deposition rate and the photoconductivity of a-Si:H films. The AMI conductivity of a-Si:H films increases with increasing disilane concentration and approaches lO−5(ohm-cm)−l at disilane concentrations higher than about 4%, and the conductivity ratio is about lO5. The density of gap states in CVD a-Si:H films have been determined by the photothermal deflection spectroscopy, capacitancetemperature, capacitance-frequency, and space-charged-limited current measurements with similar results.

Electronic and Optical Properties of a-Si1−xCx:H Films Produced From Admixtures of Silane and Ditertiarybutylsilane

1994 ◽  
Vol 336 ◽  
Author(s):  
K. Gaughan ◽  
J.M. Viner ◽  
P.C. Taylor
Keyword(s):  
Electrical Conductivity ◽  
Silicon Carbide ◽  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photothermal Deflection Spectroscopy ◽  
Optical And Electronic Properties ◽  
Photothermal Deflection

ABSTRACTWe investigated the optical and electronic properties of amorphous silicon carbide (a-Si1−xCx:H) films produced by plasma enhanced chemical vapor deposition from admixtures of silane and ditertiarybutylsilane [SiH2 (C4H9) 2 or DTBS] using photothermal deflection spectroscopy, electrical conductivity and its temperature dependence as well as photoconductivity. These a-Si1−xCx:H films exhibit low Urbach energies and high photoconductivities similar to films produced with other carbon feedstock sources. We also present our results for hydrogen diluted a-Si1−xCx:H films using DTBS as the carbon feedstock source.

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