Reduction in residual impurities in semi-polar 303¯1¯ and 202¯1¯ GaN grown by metalorganic vapor phase epitaxy

2019 ◽  
Vol 512 ◽  
pp. 119-123
Author(s):  
Hisashi Yamada ◽  
Hiroshi Chonan ◽  
Toshikazu Yamada ◽  
Mitsuaki Shimizu
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Residual Impurities

Reduction of Residual Impurities in Homoepitaxial m -Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy

2018 ◽  
Vol 12 (8) ◽  
pp. 1800124
Author(s):  
Ousmane I Barry ◽  
Kaddour Lekhal ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
Markus Pristovsek ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Carrier Gas ◽  
Residual Impurities

Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy

1996 ◽  
Vol 25 (5) ◽  
pp. 799-803 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Masaya Mannoh ◽  
Yasufumi Yabuuchi ◽  
Yuzaburoh Ban
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Residual Impurities

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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