Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

1994 ◽  
Vol 135 (3-4) ◽  
pp. 423-433 ◽  
Author(s):  
J.M. Redwing ◽  
T.F. Kuech ◽  
D. Saulys ◽  
D.F. Gaines
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Silicon Doping ◽  
Group V ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 214-215 ◽  
Author(s):  
Douglas F. Foster ◽  
Christopher Glidewell ◽  
David J. Cole‐Hamilton
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Complex Flow and Gas-Phase Reactions in a Horizontal Reactor for GaN Metalorganic Vapor Phase Epitaxy

2000 ◽  
Vol 39 (Part 1, No. 11) ◽  
pp. 6180-6190 ◽  
Author(s):  
Kenji Harafuji ◽  
Yoshiaki Hasegawa ◽  
Akihiko Ishibashi ◽  
Ayumu Tsujimura ◽  
Isao Kidoguchi ◽  
...  
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Complex Flow ◽  
Gas Phase Reactions ◽  
Horizontal Reactor

MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization

1996 ◽  
Vol 449 ◽  
Author(s):  
S. A. Safvi ◽  
J. M. Redwing ◽  
A. Thon ◽  
J. S. Flynn ◽  
M. A. Tischler ◽  
...  
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Growth Rates ◽  
Operating Conditions ◽  
Gas Phase Reactions ◽  
Group V ◽  
Group Iii ◽  
Design And Optimization ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

ABSTRACTThe results of gas phase decomposition studies are used to construct a chemistry model which is compared to data obtained from an experimental MOVPE reactor. A flow tube reactor is used to study gas phase reactions between trimethylgallium (TMG) and ammonia at high temperatures, characteristic to the metalorganic vapor phase epitaxy (MOVPE) of GaN. Experiments were performed to determine the effect of the mixing of the Group III precursors and Group V precursors on the growth rate, growth uniformity and film properties. Growth rates are predicted for simple reaction mechanisms and compared to those obtained experimentally. Quantification of the loss of reacting species due to oligmerization is made based on experimentally observed growth rates. The model is used to obtain trends in growth rate and uniformity with the purpose of moving towards better operating conditions.

Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

1985 ◽  
Vol 24 (Part 2, No. 5) ◽  
pp. L380-L382 ◽  
Author(s):  
Mamoru Oishi ◽  
Shunji Nojima ◽  
Hajime Asahi
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Silicon Doping

High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy Using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1019-1021 ◽  
Author(s):  
Abdallah Ougazzaden ◽  
Elchuri Rao ◽  
Bernard Sermage ◽  
Laurent Leprince ◽  
Marcel Gauneau
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Group V ◽  
Carrier Gas
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