scholarly journals Reduction of Residual Impurities in Homoepitaxial m -Plane (101¯0) GaN by Using N2 Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018)

2018 ◽  
Vol 12 (8) ◽  
pp. 1870324
Author(s):  
Ousmane I Barry ◽  
Kaddour Lekhal ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
Markus Pristovsek ◽  
...  
2018 ◽  
Vol 12 (8) ◽  
pp. 1800124
Author(s):  
Ousmane I Barry ◽  
Kaddour Lekhal ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
Markus Pristovsek ◽  
...  

1992 ◽  
Vol 117 (1-4) ◽  
pp. 102-106 ◽  
Author(s):  
A. Ohki ◽  
Y. Kawaguchi ◽  
K. Ando ◽  
S. Zembutsu

1997 ◽  
Vol 170 (1-4) ◽  
pp. 491-496 ◽  
Author(s):  
W. Taudt ◽  
A. Hardt ◽  
S. Lampe ◽  
H. Hamadeh ◽  
M. Heuken

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1019-1021 ◽  
Author(s):  
Abdallah Ougazzaden ◽  
Elchuri Rao ◽  
Bernard Sermage ◽  
Laurent Leprince ◽  
Marcel Gauneau

1996 ◽  
Vol 25 (5) ◽  
pp. 799-803 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Masaya Mannoh ◽  
Yasufumi Yabuuchi ◽  
Yuzaburoh Ban

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