Reduction of Residual Impurities in Homoepitaxial m
-Plane (101¯0) GaN by Using N2
Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018)
2018 ◽
Vol 12
(8)
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pp. 1870324
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2018 ◽
Vol 12
(8)
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pp. 1800124
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1992 ◽
Vol 117
(1-4)
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pp. 102-106
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1997 ◽
Vol 170
(1-4)
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pp. 491-496
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Vol 234
(3)
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pp. 961-964
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1996 ◽
Vol 25
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pp. 799-803
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