Reaction sintering of lead zinc niobate–lead zirconate titanate ceramics

2006 ◽  
Vol 26 (1-2) ◽  
pp. 111-115 ◽  
Author(s):  
Seung-Ho Lee ◽  
Chang-Bun Yoon ◽  
Sung-Mi Lee ◽  
Hyoun-Ee Kim
2003 ◽  
Vol 18 (12) ◽  
pp. 2882-2889 ◽  
Author(s):  
Naratip Vittayakorn ◽  
Gobwute Rujijanagul ◽  
Tawee Tunkasiri ◽  
Xiaoli Tan ◽  
David P. Cann

The ternary system of lead nickel niobate Pb(Ni1/3Nb2/3)O3 (PNN), lead zinc niobate Pb(Zn1/3Nb2/3)O3 (PZN), and lead zirconate titanate Pb(Zr1/2Ti1/2)O3 (PZT) was investigated to determine the influence of different solid state processing conditions on dielectric and ferroelectric properties. The ceramic materials were characterized using x-ray diffraction, dielectric measurements, and hysteresis measurements. To stabilize the perovskite phase, the columbite route was utilized with a double crucible technique and excess PbO. The phase-pure perovskite phase of PNN–PZN–PZT ceramics was obtained over a wide compositional range. It was observed that for the ternary system 0.5PNN–(0.5 - x)PZN–xPZT, the change in the transition temperature (Tm) is approximately linear with respect to the PZT content in the range x [H11505] 0 to 0.5. With an increase in x, Tm shifts up to high temperatures. Examination of the remanent polarization (Pr) revealed a significant increase with increasing x. In addition, the relative permittivity ([H9280]r) increased as a function of x. The highest permittivities ([H9280]r [H11505] 22,000) and the highest remanent polarization (Pr [H11505] 25 μC/cm2) were recorded for the binary composition 0.5Pb(Ni1/3Nb2/3)O3–0.5Pb(Zr1/2Ti1/2)O3.


2007 ◽  
Vol 124-126 ◽  
pp. 169-172 ◽  
Author(s):  
Jong Jin Choi ◽  
Joo Hee Jang ◽  
Dong Soo Park ◽  
Byung Dong Hahn ◽  
Woon Ha Yoon ◽  
...  

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of 5~10 μm were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0, 20 and 40 %. The as deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at temperatures of 700oC, and the films deposited on sapphire were annealed at 900oC in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using FE-SEM and HR-TEM, and dielectric and ferroelectric properties of the films were characterized using impedance analyzer and Sawyer-Tower circuit, respectively. The PZN added PZT film showed poor electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700oC, on the other hand, the PZN added PZT film showed higher remanent polarization and dielectric constant values then pure PZT film when the films were coated on sapphire and annealed at 900oC. The ferroelectric and dielectric characteristics of 20% PZN added PZT films annealed at 900oC were comparable with the values obtained from bulk ceramic specimen with same composition sintered at 1200oC.


Sign in / Sign up

Export Citation Format

Share Document