A two-dimensional Monte Carlo model for pore densification in a bi-crystal via grain boundary diffusion: Effect of diffusion rate, initial pore distance, temperature, boundary energy and number of pores

2020 ◽  
Vol 40 (8) ◽  
pp. 3158-3171
Author(s):  
Youngkyun Son ◽  
Hyesoo Belinda Chung ◽  
Sukbin Lee

In measurements of grain boundary transport it is the product of the grain boundary enrichment ratio and the grain boundary diffusivity that is usually obtained. This work presents the first study in which these two terms are separated and in which the role of the grain boundary composi­tion in grain boundary diffusion is analysed in detail. This leads to the general prediction that the grain boundary diffusion of solute and solvent will be reduced by strongly segregating solutes if they do not simultaneously enhance the bulk diffusivities. The converse occurs if the solute weakly segregates but strongly enhances the bulk diffusivities. The diffusion measurements are made in iron–tin alloys in the tempera­ture range 563–750 °C by using radiotracers, and the segregation measure­ments, similarly, by Auger electron spectroscopy. The measured bulk diffusivities are similar to those found previously. The grain boundary diffusivities, determined via Suzuoka’s (1964) analysis, for iron and tin in pure iron have pre-exponential coefficients of 225 x 10 -4 and 9.2 x 10 -4 m 2 s -1 and activation energies of 165770 and 166600 J mol -1 respectively. Contrary to the increase in the bulk diffusivity produced by the ‘fast’ diffuser, tin, both grain boundary diffusivities are sharply reduced as the tin content rises. These and earlier results are interpreted through the effect of tin segregation on the grain boundary energy described by the theory of Borisov et al . (1964).


1987 ◽  
Vol 106 ◽  
Author(s):  
J. P. Lavine ◽  
S.-T. Lee ◽  
D. L. Black ◽  
D. L. Losee ◽  
C. M. Jarman

ABSTRACTPhosphorus ions were implanted into silicon layers deposited by low pressure chemical vapor deposition onto thermally oxidized silicon substrates. Thermal anneals diffused the phosphorus and the resulting depth profiles were determined by secondary-ion mass spectrometry (SIMS). Transmission electron microscopy shows that the polysilicon layers have a multi-layer pattern of grains. The phosphorus profiles are fit by a Monte Carlo simulation technique that includes both grain and grain-boundary diffusion. The grain-boundary diffusion coefficient is found to be thermally activated with an activation energy of 3.3 eV.


1994 ◽  
Vol 70 (6) ◽  
pp. 1107-1118 ◽  
Author(s):  
Wen Zhang ◽  
Joachim H. Schneibel ◽  
Chun-Hway Hsueh

2011 ◽  
Vol 309-310 ◽  
pp. 9-18 ◽  
Author(s):  
Irina V. Belova ◽  
Graeme E. Murch ◽  
Thomas Fiedler

The location of the transition points for the three main Harrison’s kinetics regimes (Type-A, B and C) for the measurement of grain boundary diffusivities from tracer concentration depth profiles (self-diffusion) has been extensively studied in (Divinski et al. Zeit. Metallk, 2002, Belova and Murch, Phil. Mag, 2001, 2009; Defect and Diffusion Forum, 2006, 2008, 2009) by making use of the phenomenological Lattice Monte Carlo numerical method. Those locations are mainly dependent on the dimensionality of the problem. For the case of impurity grain boundary diffusion, the segregation effect is very important. In the present study, the influence of segregation on the transition points is investigated for the parallel slab model (2-dimensional) of the grain boundary diffusion problem by making use of the tracer-type solution to the equivalent diffusion problem. It is shown that the Type-B regime is most likely not realized for the cases of fine-grain material with a strong segregation effect present.


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