scholarly journals Surface oxidation study of molten Mg–Al alloys by oxide/metal/oxide sandwich method

Author(s):  
Mohammad Mahdi Jalilvand ◽  
Hassan Saghafian ◽  
Mehdi Divandari ◽  
Mehdi Akbarifar
1981 ◽  
Vol 23 (7) ◽  
pp. 1617-1626 ◽  
Author(s):  
R.A. Bal'tenas ◽  
Ya.Yu. Bal'tenene ◽  
Z.K. Kevyalaitis

Author(s):  
Zainovia Lockman ◽  
Subagja Toto Rahmat ◽  
Nurulhuda Bashirom ◽  
Monna Rozana

Author(s):  
Jayaram Vishakantaiah ◽  
T. Venketeswaran ◽  
C. Venkateswaran ◽  
M. R. Ajith ◽  
Suraj Natarajan ◽  
...  

1996 ◽  
Vol 448 ◽  
Author(s):  
R.-H. Chang ◽  
M. Al-Sheikhly ◽  
A. Christou ◽  
C. Varmazis

AbstractA surface study of Si-doped GaAs (100) oriented wafers treated with NH4OH and HC1 following exposure to fluorine containing plasma was conducted using fourier transform infrared spectroscopy (FTIR). These treatments were observed to produce various oxidation products, such as AS2O5 and GaO. Though inorganic salts, such as (NH4)3GaF6, can be formed on the Si-doped GaAs wafers during cleaning with hydrofluoric acid buffered with ammonium fluoride, the applied cleaning method which consisted of NH4OH and HCl treatments subsequent to exposure to fluorine containing plasma did not induce formation of any inorganic salts. A small amount of hydroxide group was also presented in the samples. Water molecules and ammonium hydroxide can be sources of OH which can then be incorporated interstitially into the wafer surfaces.


2011 ◽  
Vol 22 (45) ◽  
pp. 455707 ◽  
Author(s):  
M Lebrón-Colón ◽  
M A Meador ◽  
D Lukco ◽  
F Solá ◽  
J Santos-Pérez ◽  
...  

Author(s):  
R. H. Geiss ◽  
R. L. Ladd ◽  
K. R. Lawless

Detailed electron microscope and diffraction studies of the sub-oxides of vanadium have been reported by Cambini and co-workers, and an oxidation study, possibly complicated by carbon and/or nitrogen, has been published by Edington and Smallman. The results reported by these different authors are not in good agreement. For this study, high purity polycrystalline vanadium samples were electrochemically thinned in a dual jet polisher using a solution of 20% H2SO4, 80% CH3OH, and then oxidized in an ion-pumped ultra-high vacuum reactor system using spectroscopically pure oxygen. Samples were oxidized at 350°C and 100μ oxygen pressure for periods of 30,60,90 and 160 minutes. Since our primary interest is in the mechanism of the low pressure oxidation process, the oxidized samples were cooled rapidly and not homogenized. The specimens were then examined in the HVEM at voltages up to 500 kV, the higher voltages being necessary to examine thick sections for which the oxidation behavior was more characteristic of the bulk.


Author(s):  
R.A. Ploc

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.


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